Ferromagnetic and Structural Properties of Mn-Implanted p-GaN
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Ferromagnetic and Structural Properties of Mn-Implanted p-GaN N. Theodoropoulou1, A.F. Hebard1, M.E. Overberg2, C.R. Abernathy2, S.J. Pearton2, S.N.G. Chu3 and R.G. Wilson4 1 Department of Physics, University of Florida, Gainesville, FL 32611 2 Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 3 Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974 4 Consultant, Stevenson Ranch, CA 95131 ABSTRACT High doses (1015 – 5x1016 cm-2) of Mn+ ions were implanted into p-GaN at ~350oC and annealed at 700-1000°C. At the high end of this dose range, platelet structures of GaxMn1-xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ~250K. At low doses, the implantation led to a buried band of defects at the end of the ion range. There is tremendous interest in structures involving the manipulation of the spin of the electron in addition to its charge for switching and memory devices with new functionality. (1-10) Applications for these spintronic devices are envisioned in communications technology, data processing and storage and in photonics. It has been demonstrated in a number of semiconductors (including GaMnAs, InMnAs and ZnMnSe) that quantum spin states are quite robust and can be transported over very large distances (>100 µm in some cases). (1-10) The ferromagnetism in dilute magnetic III-V semiconductors is carrier-induced and is still far from completely understood. (11,12) The Curie temperature (TC) in these materials is believed to be governed by the interaction between localized ferromagnetic clusters (bound magnetic polarons). Recent calculations (12) suggest that wide bandgap semiconductors may have TC values well above those for GaMnAs (110K) (10) and InMnAs (
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