Finite element simulation and experimental research on microcutting mechanism of single crystal silicon
- PDF / 3,281,634 Bytes
- 10 Pages / 595.276 x 790.866 pts Page_size
- 58 Downloads / 211 Views
ORIGINAL ARTICLE
Finite element simulation and experimental research on microcutting mechanism of single crystal silicon Bing Liu 1 & Shuwen Li 2 & Rui Li 1 & Cheng Chen 1 & Lin Liang 1 Received: 22 May 2020 / Accepted: 10 August 2020 # Springer-Verlag London Ltd., part of Springer Nature 2020
Abstract Microcutting technology, which has been proven to be an indispensable means for investigating the material removal mechanism, is able to realize the high efficiency processing of brittle materials with an ultrasmooth surface and a low-damage subsurface. In this study, a series of simulations were performed by finite element (FE) method to investigate the microcutting mechanism of the typical semiconductor material, single crystal silicon. The FE cutting models were established in terms of the Johnson–Cook constitutive relation. First, the material removal behavior during the microcutting process was studied. The results indicated that the chip formation was dominated by extrusion rather than shearing action, and both sides of the chips were smooth without any wrinkle or shear band. Then, the cutting force and cutting heat during the microcutting process were analyzed in deep. It was determined that when the cutting characteristic size reduced to less than the tool edge radius, much energy was needed to remove the materials per unit volume. Besides, microcutting experiments were conducted using a specially designed cutting platform in a scanning electron microscope, and the experimental results were observed to be in agreement with the FE simulation results. Keywords Single crystal silicon . Finite element . Microcutting . Chip formation . Material removal
1 Introduction As a promising semiconductor material with excellent properties, single crystal silicon is widely used in the fields of aerospace, energy, medical treatments, and so on, owing to its high melting/boiling point, hardness, thermostability, and radiation resistance [1, 2]. With the development of semiconductor materials science, high requirements are put forward to the specification and quality of single crystal silicon wafer. The demand proportion of the large-diameter silicon wafer is increasingly growing in the market. In general, precision lapping is a traditional means to process the single crystal silicon materials. However, the processing efficiency of precision lapping is quite low, and single crystal silicon is prone to
* Bing Liu [email protected] 1
School of Mechanical Engineering, Tianjin University of Commerce, Tianjin 300134, China
2
School of Mechanical Engineering, Tianjin University, Tianjin 300072, China
cracking in case of an unreasonable parameter selection. In recent two decades, microcutting technology has been proven to be a high-efficiency approach for investigating the material removal mechanism. It is able to realize the high-efficiency processing of brittle materials with an ultrasmooth surface and a low-damage subsurface [3]. Nevertheless, when the cutting depth reduces to the microscale, even to the nanoscale, size
Data Loading...
