Free-standing Diamond Single Crystal Film for Electronics Applications
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0905-DD06-09.1
Free-standing Diamond Single Crystal Film for Electronics Applications Jie Yang1,2, Weixiao Huang3, T.P. Chow3, and James E. Butler1 1, Gas/Surface Dynamics Section, Naval Research Laboratory, Washington DC 20375, U.S.A. 2, NOVA Research Inc., Alexandria, VA 22308, U.S.A. 3, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A. ABSTRACT High quality single crystal diamond film is an excellent transparent semiconductor material. Combined with its good electrical, optical, thermal and chemical properties, diamond-based semiconductor devices offer the potential of operation at very high voltages (>10 kV), power levels, and temperatures (>400oC) and under extreme radiation conditions. In this paper, we exploit the optical transparent property of MPCVD single crystal diamond films to correlate the quality of the epi-layers with the performance of Schottky barrier diodes fabricated on the layer. We used optical microscopy to observe stress induced birefringence caused by defects/dislocations in the material and microRaman/photoluminescence to detect relative amounts of non-diamond carbon and color centers (nitrogen and silicon atom complexes with lattice vacancies) in the material. High structural quality (low stress) is correlated with the properties of Schottky barrier diodes fabricated in the material. Vertical devices made from a 20 µm homo-epi-layer have been shown high breakdown fields of 1.85 MVcm-1 (BV= 3.7 kV) and conduction of 0.6 A/cm2 at 20V forward drop at 290 oC. Through device failure analysis, we can conclude that the 1.85 MVcm-1 field is only a lower limit for the material. Local stresses (dislocations) and point defects appear to be the main reasons for the high voltage failure of our single crystal diamond rectifiers. INTRODUCTION: Because transparent conductive (TC) materials allow light to pass through, they are very promising in electronics application. The development of a high-figure-of-merit ptype TC would enable improved flat-panel displays, UV light-emitting diodes, hetero junctions for solar cells and transparent semiconductor devices such as transistors [1,2]. Compared with other semiconductor materials, diamond has many theoretical advantages. It has a larger bandgap (5.5 eV) than SiC (3.4 eV), GaN (3.2 eV) and Si (1.1 eV) [3,4], it is one of negative affinity materials, it is naturally optical transparent, it has highly mechanical and chemical stability, and its thermal conductivity is five times higher than copper’s. The combination of all these good properties has the potential to become a material important to power devices [5,6]. The first challenge in diamond electrical applications comes from the growth process for single crystal diamond materials. Namely, how to grow large, reproducible, semiconductor quality single crystal diamond materials. .
0905-DD06-09.2
The minimization of defects (dislocations and point defects) is particularly important for obtaining semiconductor diamond films due to the proclivity of carbon to form sp2 bonds resulting in many electrical
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