High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures
- PDF / 232,045 Bytes
- 6 Pages / 612 x 792 pts (letter) Page_size
- 92 Downloads / 217 Views
ICS OF SEMICONDUCTOR DEVICES
High-Power Laser Diodes with an Emission Wavelength of 835 nm on the Basis of Various Types of Heterostructures A. V. Murashovaa^, D. A. Vinokurova, N. A. Pikhtina, S. O. Slipchenkoa, V. V. Shamakhova, V. V. Vasilyevaa, V. A. Kapitonova, A. Yu. Leshkoa, A. V. Lyutetskiya, T. A. Naleta, D. N. Nikolaeva, A. L. Stankevicha, N. V. Fetisovaa, I. S. Tarasova, Y. S. Kimb, D. H. Kangb, and C. Y. Leeb aIoffe
Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia ^e-mail: [email protected] bSamsung Electro-Mechanics Co. LTD, 443-743 Suwon-City, Republic of Korea Submitted November 19, 2007; accepted for publication November 30, 2007
Abstract—Optical and electrical characteristics of different high-power multimode laser diodes with an emission wavelength of 835 nm are compared; the diodes were obtained on the basis of three systems of solid solutions: AlGaAS/GaAs, AlGaAs/GaAsP, and (Al)GaInP/GaInAsP. An output continuous optical power of 5 W is attained in lasers with a stripe width of 80 µm irrespective of the chosen material system. The highest optical power, 7 W, is attained in the lasers based on the (Al)GaInP/GaInAsP system. PACS numbers: 42.55.Px, 42.70.Hj DOI: 10.1134/S106378260807018X
1. INTRODUCTION One of the latest trends in the production of displays for projection televisions is the use of high-power semiconductor lasers with an emission wavelength of 835 nm. Implementation of this idea implies the availability of laser diodes with maximum output continuous emission power no lower than 5 W and high efficiency. In this paper, we describe an approach for development of such laser diodes and report the results obtained as a result of studies of these diodes. In the development of a high-power multimode laser diode with the emission wavelength 835 nm, we used three systems: AlGaAs/GaAs, AlGaAs/GaAsP, and (Al)GaInP/GaInAsP. For each of the systems, we developed a type of a laser heterostructure and the technologies of growth and postgrowth treatment of the laser heterostructure; we also fabricated test samples of laser diodes with a wide (80 µm) stripe and measured their output electrical and optical parameters. On the basis of the obtained results, we compared the used material systems from the standpoint of advantages and disadvantages for production of high-power lasers that emit at a wavelength of 835 nm. 2. LASER HETEROSTRUCTURE 2.1. The AlGaAs/GaAs and AlGaAs/GaAsP Systems The structure and technology of fabrication of lasers in the AlGaAs/GaAs and AlGaAs/GaAsP systems are similar in many respects, since the laser heterostructures differ only in the active region.
When developing the laser heterostructure, as the basic structure we chose a separate-confinement double heterostructure (SC DH); this DH included Al0.5Ga0.5As emitters, Al0.3Ga0.7As waveguides, and the active region represented by either a quantum well (QW) or a GaAsP tensile-stressed QW. The composition of waveguide layers was chosen as above in order for the difference between t
Data Loading...
