• PDF / 244,520 Bytes
• 6 Pages / 432 x 648 pts Page_size
• 105 Downloads / 143 Views

DOWNLOAD

REPORT

Improvement of seed layer smoothness for epitaxial growth on porous silicon Martini R. 1,2, Sivaramakrishnan Radhakrishnan H. 1,2, Depauw V. 2, Van Nieuwenhuysen K. 2, Gordon I. 2, Gonzalez M. 2, Poortmans J.1,2 1

KU Leuven - Department of Electrical Engineering, Kasteelpark Arenberg 10, 3001 Leuven, Belgium 2 Imec, Kapeldreef 75, 3001 Leuven, Belgium ABSTRACT In the last decades many techniques have been proposed to manufacture thin (

Recommend Documents

SiC epitaxial growth on porous SiC substrates

209 62 437KB

MBE Growth of GaAs on Porous Silicon

200 35 2MB

Growth of Germanium on Porous Silicon (001)

212 2 3MB

Low Temperature Lateral Epitaxial Growth of Silicon Carbide on Silicon

226 56 1MB

Selective epitaxial growth of silicon

195 29 3MB

Atomic Layer Etching of Porous Silicon

202 71 298KB

Epitaxial Growth of Transition Metal Silicides on Silicon

211 19 2MB

Atomic layer deposition ZnO film as seed layer for hydrothermal growth of ZnO nanorods

213 71 2MB

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

219 43 3MB

MBE Growth of Epitaxial Calcium Fluoride on Silicon

188 0 2MB

Tuning of strain and surface roughness of porous silicon layers for higher-quality seeds for epitaxial growth

151 83 1MB

Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon

200 99 375KB