Metal Organic Chemical Vapor Deposition of Al and CuAl Alloy Films in a Vertical, High-Speed, Rotating Disk Reactor
- PDF / 2,862,571 Bytes
- 6 Pages / 420.48 x 639 pts Page_size
- 96 Downloads / 191 Views
Metal Organic Chemical Vapor Deposition of Al and CuAI Alloy Films in a Vertical, High-Speed, Rotating Disk Reactor G.S. Tompa(l), E. Wolak(l), R.A. Stall( 1 ), M.A. George( 2 ), M. Lippitt( 3 ), and John A.T. Norman( 4 );1) EMCORE Corporation,Somerset, NJ, 07030. 2) Air Products and Chemicals Inc., Allentown, PA 18195; 3) Harris Corporation,Palm Bay, FL 32905; 4) Schumacher, Carlsbad,CA 92009
ABSTRACT A vertical high-speed, rotating disk reactor has been used to produce Al and CuAl alloy films on 125 mm diameter Si (100) wafers. Trimethylamine-alane and Cu (hexafluoroacetylacetonate) trimethylvinylsilane (CupraSelectTm ) were used as metal precursors. Aluminum films were deposited over the temperature range from -100 C to 700 C. Aluminum sheet resistance measurements showed the films to have resistance 2 to 3 times that of bulk Al films. CuAI alloy films were deposited sequentially and by codeposition. At 30 Torr, deposition rates as high as 3.7 urn/hr, 0.024 um/hr, and 1 um/hr for Al, Cu, and CuAl films, respectively, were demonstrated. Auger analysis showed the deposited films to be free of contaminants.
INTRODUCTION Al and CuAl alloy films have played an important role in the continued miniaturization of VLSI/ULSI circuits. These films offer one of the lowest resistances of usable interconnect materials. Physical vapor deposition is presently used to deposit Al/CuAl films but this method suffers problems in further miniaturization to filling submicron interconnect vias. An alternative deposition approach which allows conformal coatings needs to be developed in order to continue the miniaturization process using AI/CuAI based interconnects. A promising method is Metal Organic Chemical Vapor Deposition (MOCVD). A vertical Rotating Disk Reactor (RDR) when used in conjunction with high speed rotation (>100 rpm) offers several advantageous not found in conventional horizontal tube or radially symmetric designs. Depletion effects are minimized by continuous injection of fresh reactants to the growth plane. Efficiency is greatly enhanced by countering the thermal buoyancy effects with the viscous drag pumping action due to the high speed rotation. In this work, an EMCORE Turbodisk GS/3300 system was used. The RDR design has been modeled extensively [1] and detailed growth studies of AlGaAs [2], InGaAsP [3], CdTe [4], and W [5] have demonstrated excellent thickness uniformities,
Data Loading...
