Monte Carlo simulations of MgO and complex oxide protective thin layers bombarded with noble-gas ion in plasma discharge
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Monte Carlo simulations of MgO and complex oxide protective thin layers bombarded with noble‑gas ion in plasma discharge devices M. El Marsi1 · A. Guennoun1 · O. Elhaitamy1 · A. Dezairi1 Received: 7 August 2020 / Accepted: 29 September 2020 © Akadémiai Kiadó, Budapest, Hungary 2020
Abstract The lifespan of plasma discharge devices is strongly influenced by the deterioration characteristics of MgO protective layer deposited on the dielectric covering the electrode. In order to attain both lower driving voltage and higher luminous efficiency in these devices, different complex metal oxides protective layers have been extensively studied as alternatives to MgO. However, the interaction between energetic ions and fast neutral atoms with the protective layer can produce serious damages to it and their nearby components. In this paper, we study the ion beam bombardment for several protective layers by low-energy noble gas with various ion incidence angles by using the Monte Carlo simulation. On the basis of the binary collision approximation using SRIM-2013, different parameters are discussed for instance backscattering yield, retained dose, sputtering yield, number of vacancies, and ion range of MgO, (Mg,Ca)O, (Mg,Sr)O, (Mg,Ba)O and (Mg,Ca,Sr)O. From our results, the retained dose, sputtering yield and number of vacancies of complex metal oxide protective layers are lower than that of MgO. Moreover, the backscattering yield increases by increasing the incident angles and it is highest for complex metal oxide protective layers. Keywords Magnesium oxide · Complex metal oxides · Monte Carlo simulations code SRIM · Ion bombardment · Five physical events · Plasma discharge devices
Introduction The interaction of energetic plasma particles with a surface material is an intensive research area for decades because it leads to a rich variety of physical phenomena such as ion implantation, sputtering, backscattering, vacancies, interstitials, etc. [1, 2]. These processes are strongly dependent on the type of both target material atoms and projectile ion, the ion energy and angle of incidence. An important effect in this area is physical sputtering, i.e. the erosion of a solid surface during ion bombardment. It requires a transfer of kinetic energy of the order of ~ 10 eV to substrate atoms. The crucial parameter of this particular case of radiation is the sputtering yield SY, which is defined as the mean number of escaping target atoms or molecules by each primary particle under the particular bombarding conditions [3, 4]. Since 1852, the * M. El Marsi [email protected] 1
Condensed Matter Physics Laboratory, Faculty of Science Ben M’sik, Hassan II University of Casablanca, B. P. 7955, Av. D. El Harty, 20663 Casablanca, Morocco
sputtering has attracted considerable attention because of its important understanding in diverse technological areas, e.g. in the vacuum and surface technologies, fabrication of thin films and coatings, surface cleaning and etching, deposition and near-surface analysis of solids [5]. Furthe
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