Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co 45 Fe 45 Zr 10 )
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DISORDER, AND PHASE TRANSITION IN CONDENSED SYSTEM
Morphology and the Magnetic and Conducting Properties of Heterogeneous Layered Magnetic Structures [(Co45Fe45Zr10)35(Al2O3)65/aSi:H]36 E. A. Dyadkinaa,*, A. A. Vorobieva,b, V. A. Ukleeva, D. Lottc, A. V. Sitnikovd, Yu. E. Kalinind, O. V. Gerashchenkoa, and S. V. Grigorieva,e a
Petersburg Nuclear Physics Institute, Gatchina, 188300 Russia Synchrotron Radiation Facility, 38000 Grenoble, France c HelmholtzZentrum Geesthacht, 21502 Geesthacht, Germany d Voronezh State Technical University, Voronezh, 394026 Russia e St. Petersburg State University, St. Petersburg, 198904 Russia *email: [email protected]
b European
Received July 2, 2013
Abstract—The morphology and the magnetic and conducting properties of an amorphous multilayer nano system [(Co45Fe45Zr10)35(Al2O3)65/aSi:H]36 consisting of (Co45Fe45Zr10)35(Al2O3)65 magnetic layers and semiconducting hydrogenated amorphous silicon (aSi:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small angle Xray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sam ple is a nonmonotonic function of the aSi:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a threedimensional structure of Co45Fe45Zr10 grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, these grains are packed in layers alternating in the vertical direction. The average lateral distance between nanoparticles in the layer plane has been determined, from which the dimensions of metal grains in each sample have been estimated. DOI: 10.1134/S1063776114020083
1. INTRODUCTION In view of rapid progress in the field of spintronics, the attention of researchers is concentrated on multi layer nanostructures consisting of alternating ferro magnetic and semiconductor layers. Special interest is devoted to studying amorphous multilayer nanostruc tures, which combine high magnetic and magnetore sistance characteristics with better structural stability [1–3] due to the absence of grain boundaries and the homogeneity of interfaces. An interesting material of this type is the multilayer nanostructure [(Co45Fe45Zr10)x(Al2O3)100 – x/a Si:H]m, where m is the number of bilayers. Each bilayer consists of a layer of an amorphous metal–dielectric (Co45Fe45Zr10)x(Al2O3)100 – x composite and an adja cent layer of semiconducting hydrogenated amor phous silicon (aSi:H). The presence of a hydrogen admixture in an argon atmosphere at the silicon depo sition stage leads to a decreased defect density in amorphous silicon layers and increased electric resis tance. The magnetic component in the composite layer is represented by the amorphous alloy Co45F
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