MOS-Only Memristor Emulator
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MOS-Only Memristor Emulator Pushkar Srivastava1 · R. K. Gupta1 · R. K. Sharma2 · Rajeev Kumar Ranjan1 Received: 19 December 2019 / Revised: 5 April 2020 / Accepted: 7 April 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Simple and integrable MOS-only memristor emulator circuits exploiting a dynamic threshold feature of MOSFET and requiring no DC bias have been presented here. The propositions herein require no external capacitors. In these two circuit propositions of floating and grounded memristor emulators, the static power consumption is zero. Theoretical justifications of the propositions have been validated by simulations carried out on the Cadence Virtuoso-Spectre tool with 180 nm CMOS GPDK parameters. Further, the experimental verification has also been done using ALD1116 and ALD1117 MOSFETs to demonstrate the practical viability of the memristor emulators of this communication. Keywords Memristor · MOSFET · Memductance · Hysteresis loop · Floating · Grounded
1 Introduction Chua’s landmark work [12] on the so-called fourth fundamental circuit element generated an overwhelming research trigger for developing a physical usable version of the same. Subsequently, several memristor emulator realizations were reported which employed diverse type of devices in addition to few resistors and capacitors. The
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Rajeev Kumar Ranjan [email protected] Pushkar Srivastava [email protected] R. K. Gupta [email protected] R. K. Sharma [email protected]
1
Electronics Engineering Department, IIT(ISM), Dhanbad, India
2
Electronics and Communication Engineering Department, Ambedkar Institute of Advanced Communication, Technologies and Research, Delhi, India
Circuits, Systems, and Signal Processing
present communication is concerned with the task of presenting two novel memristor emulators which utilize only MOSFETs and do not require any passive devices and DC bias. In this context, it is important to discuss some selected significant memristor realizations. In [25], Strukov et al. from Hewlett Packard created, arguably, the first practical memristor involving solid-state electronics and ionic transport coupling under an external bias at nanoscale systems. This memristor [25], however, could not be seen used practically afterword in the open literature. A new device showing a memristor characteristic based on ZnO nanowires grown on the copper layer of PCB has been presented in [11]. A simple floating memristor has been presented with three NMOS, one capacitor and one DC source in [28]. It is operating up to 13 MHz. The other researches in the open literature have used different types of active and passive devices to emulate the behavior of memristors, and considering the present context, they are not relevant to be discussed. Most of the other researches on memristor emulators [6, 8, 33] have used the existing analog signal processing blocks (ASPB) like CCTA, DDCC, OTA, DVCCTA and passive devices. These propositions are again not so attractive technically,
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