Nanoimprinted complementary organic electronics: Single transistors and inverters
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monstrate the fabrication of shadow mask (SM) patterned as well as nanoimprint lithography (NIL) patterned organic transistors and integrated complementary organic inverters (ICOIs). As active layers pentacene (p-type) and either PTCDI-C13H27 or F16CuPc (n-type) were used. The SM-patterned ICOIs with a staggered bottom gate configuration, a nanocomposite dielectric and both active layer combinations (pentacene/PTCDI C13H27, pentacene/F16CuPc) exhibited high performance (3 V operation voltage; gain around 60; high level 3 V; low level 5 mV; noise margin 0.9 V). Flexible ICOIs with transistor channel lengths of 900 nm were successfully fabricated by NIL, using a benzocyclobutene derivative as dielectric. Because of the process inherent coplanar bottom gate configuration, F16CuPc was used. The ICOIs showed proper functionality (3 V operation voltage; gain around 5; high level 2.9 V; low level 25 mV). To our knowledge, this study demonstrates the first complementary submicron inverters based on fully R2R compatible imprint processes. I. INTRODUCTION
Address all correspondence to this author. e-mail: [email protected] b) Fraunhofer-ISC, D-97082 Würzburg, Germany This paper has been selected as an Invited Feature Paper. DOI: 10.1557/jmr.2011.282
For common commercially available organic semiconductor materials with a charge carrier mobility around 0.1 cm2/Vs, a reduction of the channel length to scales below 1 lm and an adequate downscaling of the gate dielectric layer thickness are necessary to reach the MHz regime of circuit operation. Solutions along these lines have already been demonstrated for p-type semiconductors.8–10 An important issue in complementary organic inverters is the right choice of material combinations. Pentacene is very popular for the p-type semiconductor but needs an n-type material with sufficiently high mobility to be complemented adequately. Copper hexadecafluorophthalocyanine (F16CuPc) is known to be a relatively stable n-type semiconductor achieving field effect mobilities in the range of 10 2 cm2/Vs.11,12 Its lowest unoccupied molecular orbital (4.8 eV) is close to the work function of Au (5.0 eV).13 With regard to an implementation of the n-type device within a complementary circuit with pentacene as the p-type material, the possibility of using gold electrodes for both, the p- and the n-type device, is a decisive fabrication issue. The combination of F16CuPc and pentacene for the production of organic complementary inverters and small logic circuits was reported by several groups,11,14,15 whereas Gundlach et al.6 demonstrated the combination of PTCDI-C13H27 (N,N’-ditridecylperylene-3,4,9,10tetracarboxylic diimide) and pentacene in complementary inverters first. Because these inverters needed very high supply voltages (up to 100 V) which are incompatible with most specifications in organic electronic applications, Tatemichi et al.16 presented a promising low-voltage approach with the high-k Ta2O5 as gate dielectric on the same semiconductor material base.
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