Nanoscale magnetization reversal by electric field-induced ion migration
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Nanoscale magnetization reversal by electric field-induced ion migration Qilai Chen, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China; School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105, China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China Gang Liu, Shuang Gao, Xiaohui Yi, and Wuhong Xue, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China Minghua Tang, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China Xuejun Zheng, School of Mechanical Engineering, Xiangtan University, Xiangtan, Hunan 411105, China Run-Wei Li, CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China; Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China Address all correspondence to Gang Liu, Xuejun Zheng, Run-Wei Li at [email protected], [email protected], [email protected] (Received 30 May 2018; accepted 29 August 2018)
Abstract Nanoscale magnetization modulation by electric field enables the construction of low-power spintronic devices for information storage applications and, etc. Electric field-induced ion migration can introduce desired changes in the material’s stoichiometry, defect profile, and lattice structure, which in turn provides a versatile and convenient means to modify the materials’ chemical-physical properties at the nanoscale and in situ. In this review, we provide a brief overview on the recent study on nanoscale magnetization modulation driven by electric field-induced migration of ionic species either within the switching material or from external sources. The formation of magnetic conductive filaments that exhibit magnetoresistance behaviors in resistive switching memory via foreign metal ion migration and redox activities is also discussed. Combining the magnetoresistance and quantized conductance switching of the magnetic nanopoint contact structure may provide a future high-performance device for non-von Neumann computing architectures.
Introduction Spintronic devices, which are enabled by controlling the nanoscale magnetization at room temperature through electric means, have been widely used in the semiconductor industry for the physical implementation of magnetic random access memory, spin-polarized field eff
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