Nucleation and Growth of Diamond Thin Films: The Role of Temperature and Pressure
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NUCLEATION AND GROWTH OF DIAMOND THIN FILMS: THE ROLE OF TEMPERATURE AND PRESSURE J. Morales1, R. Bernal2, C. Cruz-Vazquez3, E.G. Salcido-Romero3 and V.M. Castaño4,* 1
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Universidad S/N, San Nicolás, Nuevo León 66450 México 2
Departamento de Investigación en Física, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo, Sonora 83190 México 3
Departamento de Investigación en Polímeros y Materiales, Universidad de Sonora, Apartado Postal 130, Hermosillo, Sonora 83000 México 4
Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A. P. 1-1010, Querétaro, Querétaro 76000 México *On sabatical leave at Universidad Autónoma de Querétaro
ABSTRACT Diamond thin films were deposited onto Si (100) substrates using liquid a solution of water and acetone, ethanol, methanol and commercial Tequila as precursors by the Pulsed Liquid Injection Chemical Vapor Deposition (PLICVD) technique. Temperature was varied from 550 °C to 850 °C. In this work we attempted to find a crystal diameter dependence on temperature and pressure from the experimental data. The goal in this work is to found a function that can be adjusted to the experimental data.
INTRODUCTION Diamond thin films properties are so close to the natural diamond that some have already found commercial applications, such as optical, electronic, medical and mechanical applications. Diamond thin films have been synthesized by a variety of Chemical Vapor Deposition (CVD) techniques. The CVD require a mean of activating gas-phase carbon-containing precursor molecules, which can be achieved by a hot filament, an electric discharge, radiofrequency, microwave, flame, etc. [1-3]. The CVD produced diamond is comparable, in purity and properties, to its natural counterpart. In most CVD experiments, hydrocarbon gases, diluted in hydrogen at a very high percentage, are regularly used as carbon source [4].
Diamond thin films have been growth by the Pulsed Liquid Injection Chemical vapor Deposition onto different substrates (stainless steel and silicon),the effect of the experimental parameters on the film quality were analyzed and discussed by Morales et al, in terms of the crystalline, composition, structure and morphology [5,6]. As in any CVD technique, the Pulsed Liquid Injection Chemical Vapor Deposition involves many reactions in vapor phase as well as surface processes. In this case, vapor-phase reaction is driven by the flash evaporation phenomena to produce reactive products at the reaction chamber. In general, the PLICVD offers many advantages, such as uniform deposition over large area, conformal coverage, selective deposition and high reproducibility [7].
The diamond crystal diameter as a function of temperature and pressure is analyzed considering this two parameters as the only ones that contributed to the growth and nucleation process. Of course, there are others parameters that affect the growth phenomena, such as, substrate characteristics, chemical
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