Optical properties of defects in nitride semiconductors
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Matthias Hocker and Benjamin Neuschl Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany
Manfred Madel Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany; and UMS GmbH, 89081 Ulm, Germany
Martin Feneberg Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany; and Otto von Guericke University, 39106 Magdeburg, Germany
Martin Schirra Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany; and Hochschule Kempten, 87435 Kempten, Germany
Manuel Frey Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany; and U-L-M Photonics, 89081 Ulm, Germany
Manuel Knab and Pascal Maier Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany
Thomas Wunderer Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany; and Palo Alto Research Center, Palo Alto, California 94304, USA
Robert A.R. Leute Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany; and Automotive Lighting, 72762 Reutlingen, Germany
Junjun Wang and Ferdinand Scholz Institute of Optoelectronics, University of Ulm, 89081 Ulm, Germany
Johannes Biskupek, Jörg Bernhard, and Ute Kaiser Electron Microscopy Group of Materials Science, University of Ulm, 89069 Ulm, Germany
Ulrich Simon Scientific Computing Centre Ulm, University of Ulm, 89081 Ulm, Germany
Levin Dieterle Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany; and VEGA Grieshaber KG, 77761 Schiltach, Germany
Heiko Groiss Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany; and Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
Erich Müller and Dagmar Gerthsen Institute of Electron Microscopy, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
Klaus Thonke Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany (Received 29 May 2015; accepted 18 August 2015)
Group III nitrides are promising materials for light emitting diodes (LEDs). The occurrence of structural defects strongly affects the efficiency of these LEDs. We investigate the optical properties of basal plane stacking faults (BFSs), and the assignment of specific spectral features to distinct defect types by direct correlation of localized emission bands measured by cathodoluminescence in Contributing Editor: Joan M. Redwing a) Address all correspondence to this author. e-mail: [email protected] This paper has been selected as an Invited Feature Paper. DOI: 10.1557/jmr.2015.273 Downloaded from https:/www.cambridge.org/core. Memorial Library, 2017 at 14:01:21, subjectSociety to the Cambridge J. Mater.Boston Res.,University, Vol. 30,Mugar No. 20, Oct 28, 2015on 10 Jan Ó Materials Research 2015 Core terms of use, available at https:/www.cambridge.org/core/terms. http://dx.doi.org/10
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