Optically Detected Magnetic Resonance of a Hydrogen-Related Complex Defect in Silicon
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OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT INSILICON W.M. CHEN*, 0.0. AWADELKARIM*, B. MONEMAR*,**, J.L. LINDSTROM', AND G.S. OEHRLEIN*... * Department of Physics and Measurement Technology, Link6ping University, S-581 83 LinkLping, SWEDEN ** Present address: Max-Planck-Institut fur Festk6rperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, FRG *** Swedish Defence Research Establishment, P.O. Box 1165, S-581 11 Link6ping, SWEDEN ****.IBM Research Division, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 USA ABSTRACT We present for the first time an optically detected magnetic resonance (ODMR) study of a hydrogen-related defect in silicon. The defect is present in hydrogenated boron-doped silicon single crystals, after room-temperature electron-irradiation. A spin-triplet (S=1) is shown to be the electronic state responsible for the observed ODMR spectrum. An angular dependence study of the ODMR spectrum reveals a C2v defect symmetry. The defect model is discussed in terms of a dihydrogen-vacancy complex. The role of this defect as an efficient recombination channel (presumably non-radiative) for the nonequilibrium free carriers is also demonstrated. INTRODUCTION Hydrogen in semiconductors has recently recieved great attention, not only because of its fascinating physical properties, but also due to its technological importance [1]. The prevalence of hydrogen incorporation in silicon and the ability of hydrogen to passivate the electrical properties of shallow acceptors, donors and point defects are now well established [1-14], both from experimental investigations by a variety of techniques [2-10] and from extensive theoretical efforts [1114]. Such studies by magnetic resonance techniques, which are particularly useful for a better understanding of the detailed electronic structure and direct microscopic identification of hydrogen-related defects, have been very limited so far [15]. In this paper, we report on microscopic identification and electronic structure of a hydrogen-related complex defect in silicon (denoted as HX below) by ODMR. Recombination processes of free carriers via this complex will also be discussed.
Mat. Res. Soc. Symp. Proc. Vol. 163.
1990 Materials Research Society
378
EXPERIMENTAL The ODMR experiments in this work were performed on a modified Bruker 200 D-SRC X-band spectrometer, equipped with an Oxford ESR 10 liquid helium continuous flow cryostat and a cylindrical TE0 1 1 microwave (MW) cavity with optical access from all directions. The sample temperature could be varied continuously down to about 2 K, with the aid of a second pump line. An Ar+-Iaser (5145 A line) was employed for above bandgap optical excitation. The ODMR signal was collected by a North-Coast EO-817 Ge detector, sometimes via a Jobin-Yvon 0.25 m grating monochromator for spectral studies, and was lock-in detected in
phase with the amplitude-modulated microwave radiation. Boron-doped single crystalline silicon wafers (10-20 0.cm), grown by the Czochralski (Cz) method, wer
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