Phonons correction of the energy and photoionization cross section in polar semiconductors and hollow nanoparticles
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Phonons correction of the energy and photoionization cross section in polar semiconductors and hollow nanoparticles Safae M’zerd1, Abdelali Talbi2, Mouad Bikerouin3, Mohamed El Haouari4, Noreddine Aghoutane1, Mohamed El-Yadri1, Zhi-Hai Zhang5, Jian-Hui Yuan6, Mostafa Sadoqi7, Gen Long7,a) , El Mustapha Feddi1,b) 1
Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM, Mohammed V University in Rabat, Rabat 10000, Morocco Faculty of Sciences, Laboratory of Physics Condensed Matter LPMC, Ibn Tofail University, Kenitra 14000, Morocco 3 Renewable Energy and Advanced Materials Laboratory, International University of Rabat, Rabat 11100, Morocco 4 Centre Régional des Matiéres de l’Education et de Formation (CRMEF), Tanger 90060, Morocco 5 College of Physics and Electronic Engineering, Yancheng Teachers University, Yancheng 224007, China 6 Department of Physics, Guangxi Medical University, Nanning 530021, China 7 Department of Physics, St John’s University, Jamaica, NY 11439, USA a) Address all correspondence to these authors. e-mail: [email protected] b) e-mail: [email protected] 2
Received: 4 March 2020; accepted: 5 May 2020
In this paper, we report a recent theoretical study of the calculation of the binding energy and photoionization cross section of a single dopant in a spherical hollow or core/shell quantum dot taking into account the interaction of the electron with longitudinal optical phonons. Using Frolich approach and Lee-low Pines transformation, we determine the impact of different parameters such as shell thickness and dopant position on the energy and optical response of a bound polaron for two types of ionic II–VI semiconductors CdTe and ZnSe with different phonon coupling constants. Regardless of the material used, the electron–phonon interaction visibly reduces binding energy. For photoionization cross section, a redshift of resonance peaks was found when the effect of phonons is taken into consideration or when the donor is moved away from the shell center. These calculations provide us insights when choosing between materials for optoelectronic applications.
Introduction In the last few decades, spherical core/shell quantum dots (SCSQD) have been extensively investigated due to their original physical properties and the broad range of applications in different fields [1, 2, 3, 4]. Depending on the combinations of materials composed of the core/shell structure, unique and surprising physical properties can arise. In particular, the tunable physical properties have been shown so far to be desirable in applications such as polarized single-photon sources [5, 6], biological detection and medical imaging [7, 8, 9], lasing [10, 11], nonlinear optics [12,13], and photovoltaic cells [14, 15]. The electronic structure changes considerably with the size, shape, and structures of the nanoparticles, therefore, makes it possible to control better the optical properties such as optical absorption and emission characteristics. These properties can
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