Programs Shape Up for Series of 1988 Materials Conferences in Japan
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omiya, M. Daimon, G. Sudo, and K. Takemoto T. Biosensers — I. Karube X. Frontiers in Materials Science and Engineering (invited papers only) — R. Roy, M. Doyama, and S. Somiya Advance registration fees are: 30,000 yen — overseas registrants and those from Japan affiliated with a university or public institution 100,000 yen—representatives from private enterprises in Japan 15,000 yen — students 20,000 yen — one-day registration Fees after March 31, 1988 will be 10,000 yen higher. Send registrations to: Profs. M. Doyama and S. Somiya, MRS International Meeting on Advanced Materials, c/o Nikkan Kogyo S h i m b u n Ltd., P l a n n i n g Bure a u, 8-10 Kudan Kita, 1-chome, Chiyoda-ku, Tokyo 102, Japan. The meeting is being held the week following the High Technology Exhibition '88 in Tokyo, organized by Nikkan Kogyo Shimbun. Sixth International Conference on Ion Beam Modification of Materials (IBMM'88) This international meeting, cosponsored by the Materials Research Society, Japan Society of Applied Physics, and Okochi Memorial Foundation, will be held June 1217 at Shigaku-Kaikan Hall, Tokyo. This sixth conference in this series will bring together investigators in the field of materials modification by ion beams to discuss recent progress and future trends. Abstracts are sought by January 10,1988 on the following topics: Ion beam-solid interaction: ion-beaminduced physical and chemical effects, ion penetration, channeling effect, stopping power, sputtering, damage, radiation effect, beam analysis. Ion beam mixing: interface modification, recoil implantation, silicide formation, metastable alloy formation, ceramics coating, enhanced adhesion. Ion beam modification of metals: characterization of implanted layers, surface modification, metastable alloy formation, ion implantation in superconductors. Ion beam modification of insulators: characterization of implanted layers, physical and chemical properties, modification of p o l y m e r s , m a g n e t i c m a t e r i a l s , a n d ceramics.
PAGE 86, MRS BULLETIN, OCTOBER 1/NOVEMBER 15, 1987
Ion implantation in semiconductors: characterization of implanted layers, dose rate effects, beam annealing, buried insulator structure formation, implantation in superlattice structure, a m o r p h o u s layer formation and crystalline regrowth, device applications. Novel techniques for materials modification: surface modification by ion-beamassisted process such as reactive etching and deposition, ion beam lithography, focused ion beam process, rapid thermal annealing, shallow junction formation, high and low energy implant. The conference is chaired by S. Namba (Osaka University) and co-chaired by N. I t o h ( N a g o y a U n i v e r s i t y ) , M. I w a k i (RIKEN), J. Kawamoto (Toyota Central Research and Development Laboratories), and T. Takagi (Kyoto University). T h e r e g i s t r a t i o n fee of 40,000 y e n includes a copy of the conference proceedings. Send abstracts and registrations to: Dr. Kenjo Gamo, IBMM'88 Secretary, Department of Electrical Engineering, Osaka Unive
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