Research on detection and location of weak edge signals
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ORIGINAL PAPER
Research on detection and location of weak edge signals Zhou Xiuyun1 · Cao Xiaohan1 · Zhou Ting1 · Liu Zhen1 Received: 26 December 2019 / Revised: 13 March 2020 / Accepted: 18 March 2020 © Springer-Verlag London Ltd., part of Springer Nature 2020
Abstract In order to be able to control the growth rate of industrial polycrystalline silicon rods well and reduce energy consumption, it is necessary to accurately locate the boundaries of the silicon rods and measure the diameter of the silicon rod during growth. In this paper, a weak edge signal detection method based on small area is proposed for the problem of weak boundary signal in the late growth stage of polycrystalline silicon rods. The method increases the gradient of the edge by projecting the boundary signal in the column direction. In addition, the method further enhances the gradient information of the weak boundary signal by improving the classical difference operator. In the experimental part, the improved difference operator increases the weak difference signal value from 304 to 686. Finally, the effectiveness of the algorithm is proved by two groups of experimental results. Keywords Difference operator · Edge signal processing · Data processing · Weak signal · Edge detection
1 Introduction In recent years, polycrystalline silicon has been used more and more widely, not only in electronic integrated circuits, photovoltaic industry and discrete devices, but also in marine aerospace, military industry, information technology and other fields. In the growth process of polycrystalline silicon in the reduction furnace, the temperature inside the furnace, the diameter of the silicon rod and the concentration of the feed gas are all key factors determining the growth quality of the silicon rod [1]. For example, increasing the temperature increases the rate at which gas is deposited on the silicon core and accelerates the growth rate of the silicon rod. However, too high a temperature will increase the energy consumption and make the uniformity of the growth of the silicon rod worse. Conversely, lowering the temperature will cause the growth rate of the silicon rod
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Cao Xiaohan [email protected] Zhou Xiuyun [email protected] Zhou Ting [email protected] Liu Zhen [email protected]
1
School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
to slow down. When the temperature is low to a certain extent, it will also cause the silicon rod to break [1]. However, the variation of the diameter of the silicon rod over time can be used as an important basis for temperature regulation and the proportion of the composition of the feed gas. In actual engineering, the diameter of polycrystalline silicon rod shall be controlled within 10 mm to 150 mm, and the error shall be controlled within plus or minus 10%. However, there is no effective means for the diameter detection of silicon rods. It is mentioned in literature [2] that at the production stage, deposition time or visual inspection methods ba
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