Response of Thermo- Electro-Magneto Semiconductor Elastic Medium to Photothermal Excitation Process with Thomson Influen
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ORIGINAL PAPER
Response of Thermo- Electro-Magneto Semiconductor Elastic Medium to Photothermal Excitation Process with Thomson Influence Moh’d Yasein 1,2 & Kh. Lotfy 3,4
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N. Mabrouk 1,5 & A. A. El-Bary 6 & W. Hassan 7,8
Received: 27 September 2019 / Accepted: 25 December 2019 # Springer Nature B.V. 2020
Abstract The effect of Thomson heating of semiconductor medium is studied. Analytical discussions are made in the presence of thermoelectricity theory and magnetic field in context of Photothermal transport process. The interactions between plasma, thermoelectric, electromagnetic and elastic waves are taken into consideration. The governing equations are investigated in two dimensional deformations of homogenous, isotropic medium. The density of charge is taken as a function of time only of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied on the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effect of thermoelectric parameter and Thomson parameter. Keywords Photothermal theory . Thomson effect . Magnetic field . Normal mode method . Thermoelectric . Semiconductors
1 Introduction The mechanical, electric and thermal properties of semiconductors materials vary with change of temperature. When a temperature gradient due to absorption of light occurs in semiconductor elastic materials causes to an electric potential difference between end points of in the semiconductor. In this case the relation between the heat production and electrical
* Kh. Lotfy [email protected] Moh’d Yasein [email protected] N. Mabrouk [email protected] A. A. El-Bary [email protected] W. Hassan [email protected] 1
Northern Border University, College of Science, P.O. Box 1631, Arar, Saudi Arabia
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Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, Egypt
resistance will be taking into consideration (a temperature change along any strip of homogeneous semiconductor due to an electric current transient through it). The first scientist who was discovered this phenomenon is William Thomson (1854) knew later by thermoelectricity, it is important when a semiconductor wafer probes is studied. The coupled between the thermal and electro-magnetic fields is very important to understand the thermal convection, Peltier effect and
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Department of Mathematics, Faculty of Science, Zagazig University, P.O. Box 44519, Zagazig, Egypt
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Laboratoire des Interfaces et Matériaux Avancés, Département de Physique, 4Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir, Tunisia
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The Hashemite University, Department of Mathematics, -13133, Zarqa, Jordan
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Department of Mathematics, Faculty of Science, Taibah University, Madinah, Kingdom of Saudi Arabia
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D
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