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Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance Walid A. Hadi1, Michael S. Shur2, and Stephen K. O’Leary3 1 Department of Electrical and Computer Engineering, University of Windsor, Windsor, Ontario, Canada N9B 3P4 2 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590, U.S.A. 3 School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7 ABSTRACT We review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. We employ three-valley Monte Carlo simulations of the electron transport within this material for the purposes of this analysis. Using these results, we devise a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport over steady-state electron transport. A comparison, with results corresponding to gallium nitride, indium nitride, and aluminum nitride, is provided. The device implications of these results are then presented. INTRODUCTION Zinc oxide (ZnO) is a II-VI compound semiconductor that offers material properties that make it ideally suited for a number of important electronic and optoelectronic device applications [1]. Accordingly, ZnO has become a focus of attention in recent years. In order to make projections as to the performance of this material in electron device configurations, an understanding of the electron transport within this material must be acquired. Accordingly, analyses of the electron transport that occurs within ZnO have been performed over the years. In particular, Monte Carlo simulations of the electron transport that occurs within ZnO have been reported on by Albrecht et al. [2] in 1999, by Guo et al. [3] in 2006, by Bertazzi et al. [4] in 2007, by Furno et al. [5] in 2008, by O’Leary et al. [6] in 2010, by Hadi et al. in 2012 [7, 8], and by Hadi et al. in 2013 [9]. Both the steady-state and the transient electron transport response of this material have been examined. The results obtained point to a material that exhibits a relatively high steady-state peak electron drift velocity at very high electric field strengths. A substantive electron drift velocity overshoot is also observed under certain conditions. In this paper, we review some recent results related to the steady-state and transient electron transport that occurs within bulk wurtzite ZnO. We employ three-valley Monte Carlo simulations of the electron transport within bulk wurtzite ZnO for the purposes of this study. Drawing upon these results, we propose a means of rendering transparent the electron drift velocity enhancement offered by transient electron transport. A comparison, with results corresponding to gallium nitride (GaN), indium nitride (InN), and aluminum nitride (AlN), is provided. The device implications of these results are then examined.

SIMULATIONS We follow a course of analysis paralleling that e