The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-p
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X.J. Meng, J.L. Sun, T. Lin, and J.H. Ma National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
J.H. Chub) National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China; and Laboratory for Polar Materials and Devices, East China Normal University, Shanghai 200062, People’s Republic of China
N. Wang Department of Physics and Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
Joonghoe Dho Department of Physics, Kyungpook National University, Daegu 702-701, Korea (Received 9 January 2008; accepted 28 May 2008)
The Pb(ZrxTi1–x)O3 (PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.
I. INTRODUCTION
Ferroelectric lead zirconate Pb(ZrxTi1–x)O3 (PZT) thin films with a perovskite crystal structure have been widely and intensely studied because of their potential and practical applications in various functional devices, such as nonvolatile memory components, thermal imaging arrays, microactuators, microelectromechanical systems (MEMS), electro-optic devices for data storage and displays, wave guides, high-dielectric constant capacitors, and micromotors.1–11 Chemical and physical deposition techniques, such as chemical solution decomposition (CSD), sol-gel, metalorganic chemical vapor Address all correspondence to these authors. a) e-mail: [email protected] b) e-mail: [email protected] DOI: 10.1557/JMR.2008.0365 2846
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J. Mater. Res., Vol. 23, No. 11, Nov 2008 Downloaded: 14 Mar 2015
deposition (MOCVD), sputtering, and pulsed laser deposition (PLD), have been used to fabricate ferroelectric PZT thin films. Such fabrication methods generally require a high-temperature condition to induce a good crystallinity in the PZT film and thus a good ferroelectricity. The fabrication or post-treatment temperatures were typically above 600 °C. On the other hand, chip-level fabrication “monolithic integration” directly with underlying sign
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