The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides
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The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides Baishan Liu1,2,§, Junli Du1,2,§, Huihui Yu1,2, Mengyu Hong1,2, Zhuo Kang1,2, Zheng Zhang1,2 (), and Yue Zhang1,2 () 1
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China 2 State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China § Baishan Liu and Junli Du contributed equally to this work. © Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019 Received: 28 September 2020 / Revised: 16 November 2020 / Accepted: 19 November 2020
ABSTRACT van der Waals (vdW) heterostructures based on two-dimensional (2D) materials holding design-by-demand features offer astonishing opportunities to construct novel electronics and optoelectronics devices due to the vdW force interaction between their stacked components. At the atomically thin confinement, vdW heterostructure not only exhibits unprecedented properties as an entire counterpart, but also provides unique platforms to manipulate the vdW interfacial behaviors. Therefore, developing characterization techniques to comprehensively understand the coupling effect on structure–property–performance relationship of vdW heterostructures is crucial for fundamental science and practical applications. Here, we focus on the most widely studied 2D semiconductor transition metal dichalcogenides (TMDCs) and systematically review significant advances in characterizing the material and interfacial coupling effect of the related vdW heterostructures. Specially, we will discuss microscopy techniques for unveiling the structure–property relationship of vdW heterostructures and optical spectroscopy measurements for analyzing vdW interfacial coupling effect. Finally, we address some promising strategies to optimize characterization technologies for resolving vdW heterostructures, including coupling multiple characterization technologies, improving temporal and spatial resolution, developing fast, efficient, and non-destructive techniques and introducing artificial intelligence.
KEYWORDS van der Waals heterostructures, transition metal dichalcogenide materials, structure–property characterization, interfacial behaviors, microscopy techniques, optical spectroscopy techniques.
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Introduction
Two-dimensional (2D) materials, a class of atomically thin materials starting with the investigation of graphene in 2004 [1], provide unique opportunities for types of basic scientific research and technological innovation. Recent efforts have expanded the library of 2D materials to include insulators (e.g., hexagonal BN (h-BN)) [2], semiconductors (e.g., MoS2, black phosphorus (BP)) [3, 4], semimetals (e.g., graphene), and superconductors (e.g., NbSe2) [5]. Particularly, semiconducting transition meta
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