The Role of Oxygen in p-Type InP
- PDF / 386,495 Bytes
- 6 Pages / 420.48 x 639 pts Page_size
- 10 Downloads / 155 Views
THE ROLE OF OXYGEN IN p-TYPE InP J. MICHEL, J. JEONG, K.M. LEE, AND L.C. KIMERLING AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07041 ABSTRACT We have studied the influence of oxygen on the optical properties of Be implanted InP. Be implanted p-type InP without oxygen shows a strong deep photoluminescence (PL) band at 0.82 eV following anneal. As the oxygen concentration increases, the 0.82 eV PL-band disappears. We attribute the disappearance of this PL-band to the formation of oxygen complexes with the implantation induced defects. In epitaxial grown, nominally undoped InP a new PL-line is observed at -1.2 eV. The paramagnetic state of the phosphorus on indium Pin antisite is observed by optically detected magnetic resonance (ODMR) as a modulation of the photoluminescence in all Be implanted samples without oxygen. The antisite resonance is detected as a reduction of the 0.82 eV PL-band and the 1.2 eV PLband. The observation of the Fe3+ resonance by ODMR spectroscopy is reported for the first time. INTRODUCTION InP is of considerable interest for its applications in optoelectronic and microwave devices. Ion implantation has proven to be an important doping technique which provides very good doping control and is used to realize n-type as well as p-type layers in semi-insulating InP substrates [1-4]. Little is known about defects and defect reactions due to implantation damagg in these materials. Because implantation damage is confined to a layer of 200() to 3000 A, spectroscopic techniques like photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) spectroscopy, detected as a change in intensity of the emission, are uniquely suitable to study processing. Only a few PL investigations [e.g. 5-7] have been reported on implanted InP. Band edge luminescence due to the implanted dopants and deep luminescence due to implantation damage have been observed . The only deep center in InP which has been studied by ODMR is the Pi, antisite defect [8-10]. It was found to be associated with a broad emission at 0.89 eV in electron irradiated InP:Zn. Recently, the Pin antisite was reported in P implanted InP [11]. In this paper we report on the effect of oxygen co-implantation in implanted p-type InP and the observation of a new antisite defect in implanted InP. To determine the quality of the implanted material PL measurements were performed. ODMR spectroscopy was used to investigate the implantation and heat treatment process using the Pin antisite as a defect fingerprint. EXPERIMENTAL As starting material semi-insulating InP:Fe and nominally undoped epitaxial lnP was used. Be was implanted at 20 keV with a dose of 3x10 13cm-2 for epi InP and 6x]013 cm- 2 for InP:Fe. 0 was implanted at 30 and 70 keV with various doses up to 4x10 13 cm- 2 . The implantation temperature for 0 was 200" C, Be was implanted at room temperature. After capping with 100 nm thick borosilicate glass, the samples were activated at 850° C for 15 sec. using a rapid thermal annealer. A 0.3 m monochromator was used
Data Loading...
