Thermal and mechanical design of tangential hybrid microchannel and high-conductivity inserts for cooling of disk-shaped
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Thermal and mechanical design of tangential hybrid microchannel and high‑conductivity inserts for cooling of disk‑shaped electronic components R. Dadsetani1 · G. A. Sheikhzade1 · Marjan Goodarzi2 · Ahmad Zeeshan3 · Rahmat Ellahi3 · Mohammad Reza Safaei4,5,6 Received: 12 February 2020 / Accepted: 5 September 2020 © Akadémiai Kiadó, Budapest, Hungary 2020
Abstract The efficiency of electronic equipment is the cornerstone of technology development. Thermal conditions significantly affect the performance of electronic components. Moreover, mechanical strength, size, and mass are the parameters that impose some limitations. Thus, they should be considered in the high tech industry. Therefore, it is needed to examine both mechanical and thermal behaviors simultaneously. Microchannel and inserted high-conductivity materials are two usual cooling approaches. To improve cooling efficiency and mechanical strength, a new method named Hybrid is introduced here. This method is a combination of microchannel and high-conductivity methods. In this study, the consumed energy, the conductivity ratio of the material with high conductivity, peak temperature, and maximum Von Mises stress have been investigated and analyzed. For the hybrid method, the peak temperature and stress were minimized regarding the volume of high-conductivity change in the tangential direction of the duct. The results showed that the tangential hybrid method could decrease the peak temperature and peak Von Mises stress, up to 40% and 34% in comparison to the microchannel and high-conductivity inserts method. Keywords Thermal stresses · Microchannel · Hybrid method · High-conductivity · Cooling · Strength
* Mohammad Reza Safaei [email protected] 1
Department of Mechanical Engineering, University of Kashan, Kashan, Iran
2
Sustainable Management of Natural Resources and Environment Research Group, Faculty of Environment and Labour Safety, Ton Duc Thang University, Ho Chi Minh City, Vietnam
3
Department of Mathematics and Statistics, FBAS, International Islamic University, Islamabad, Pakistan
4
Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
5
Faculty of Electrical‑Electronic Engineering, Duy Tan University, Da Nang 550000, Vietnam
6
NAAM Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, Jeddah, P.O. Box 80259, Saudi Arabia
List of symbols Be Dimensionless pressure drop D The thickness of the microchannel (m) E Consumed energy L Length (m) M Mass flow rate (kg s−1) P Pressure (N m−2) ∆p Pressure drop (N m−2) Pr Prandtl number q′′ Heat flux (W m−2) T Temperature (K) Greek symbols µ Ratio conductivity ρ Shear stress (Pa) Ω Ratio volume of high conductivity to the microchannel
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Introduction With the advent of technology, and, with it, the issues associated with the cooling and mechanical strength of the microelectronic devices have become more complicated. The optimal mass and maximum temperature
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