Upconversion temperature sensing assists the understanding of light-emitting properties in Gd 2 (MoO 4 ) 3 :Y 3+ /Yb 3+
- PDF / 2,643,737 Bytes
- 7 Pages / 595.276 x 790.866 pts Page_size
- 20 Downloads / 205 Views
Upconversion temperature sensing assists the understanding of light‑emitting properties in Gd2(MoO4)3:Y3+/Yb3+/Er3+‑based LED Shunan Chen1 · Tao Pang2 · Junwen Mao2 Received: 22 January 2020 / Accepted: 6 May 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract In this work, the upconversion temperature sensing was used to study the light-emitting properties of Gd2(MoO4)3:Y3+/ Yb3+/Er3+-based LED. In order to obtain high-intensity upconversion luminescence, we studied the effect of Y3+ doping concentration on the photon upconversion of Yb3+/Er3+-activated Gd2(MoO4)3 under 940 nm excitation. We also explored the calibration of upconversion temperature sensing and established a reliable temperature scale. Finally, the light-emitting properties of an operating LED that consisted of a 940-nm semiconductor chip and the optimum phosphor were studied by using the upconversion luminescence thermometry. Keywords Upconversion · Temperature sensing · LED
1 Introduction As everyone knows, LEDs are displacing the traditional incandescent lamps and fluorescent lamps attributable to the advantages of high luminous efficiency, low energy consumption, longer life, smaller size, etc. In general, an LED device consists of a semiconductor chip with blue emission and the yellow phosphors (herein named as D-LED). The high energy pump photons can degrade the phosphors, so the brightness as high as tens of kcd/m2 is impossible for the D-LED [1]. In contrast, the upconversion emission is not affected by this [1]. Recently, many works have focused on the LEDs that consisted of an infrared semiconductor chip and the upconversion emitters (named as U-LED) owing to the potential application in solid-state lighting and colorful display [2, 3]. However, as far as we known, there has not been any Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03610-6) contains supplementary material, which is available to authorized users. * Tao Pang [email protected] 1
Qiuzhen College, Huzhou University, Huzhou 313000, Zhejiang, China
College of Science, Huzhou University, Huzhou 313000, Zhejiang, China
2
research on the temperature-dependent light-emitting properties of U-LED. For the D-LED, it has been confirmed that the light output of the device declines with the rise in junction temperature, and even the lifetime of the device decreases due to the irreversible loss in light output. The device structure of U-LED is similar to that of D-LED; thus, its luminous flux and reliability should also be affected by the temperature. Unfortunately, this did not get people’s attention. It has been reported that the upconversion luminescence materials activated with E r3+, Tm3+ or H o3+ could be used as the noncontact optical thermometers [4–6]. Consequently, it seems feasible to study the temperaturedependent light-emitting properties of U-LEDs by using the temperature sensing properties of upconversion phosphors. In this work, on the basis of the highly sensitive te
Data Loading...
