Quantitative Measurement of the Effect of Annealing on the Adhesion of Thin Copper Films Using Superlayers
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		    Mat. Res. Soc. Symp. Proc. Vol. 505 0 1998 Materials Research Society
 
 hours in a nitrogen atmosphere, and cooled to room temperature at 20 0C/min. Tungsten was then sputter-deposited simultaneous on all eight wafers. All film thicknesses were measured with Rutherford backscattering spectroscopy, using a 3.7 MeV ion beam of He++ and are given in Table I. Residual stresses were determined using waferbow measurements and are considered nominal. The as-sputtered copper films have previously been shown to have a grain size of 50-100 nm and indentation hardness of 5-10 GPa [15]. Table I. Sample Thicknesses and Tensile Residual Stresses. Group A Group B Group C Actual Thickness
 
 225 nm
 
 As-sputtered Cu residual stress Annealed Cu
 
 215 MPa 165 MPa
 
 225 nm
 
 385 nm
 
 425 nm
 
 610 nm
 
 235 MPa 225 MPa
 
 165 MPa
 
 590 nm
 
 Group D
 
 1000 nm 1025 nm
 
 240 MPa 220 MPa 230 MPa 265 MPa
 
 150 MPa
 
 90 MPa
 
 75 MPa
 
 residual stress
 
 SuperlayerW
 
 715 nm
 
 635 nm
 
 715 nm
 
 685 nrn
 
 710 nm
 
 720 nm
 
 695 nm
 
 710 nm
 
 l10MPa
 
 65 MPa
 
 thickness SuperlayerW residual stress
 
 365 MPa 180 MPa
 
 315 MPa 310 MPa
 
 290MPa 210 MPa
 
 Mechanics of Delamination Nanoindentation-induced delamination has been studied by a number of researchers [16-18]. The test method consists of driving a spherical-tip conical indenter perpendicularly into and then out of, the film. The methodology of Marshall and Evans [11] is used to characterize the interfacial energy driving delamination, using solutions by Hutchinson and Suo [7] for the buckling stress of an axisymmetric clamped plate. This model assumes that indentation volume results only in radial expansion of the film, inducing a strain-field within the film. Strain energy is calculated as a function of residual-stress, OR, and indentation-induced stress, TI,which is given as
 
 0,
 
 VI Ef
 
 27rha 2 (1- Vf)
 
 In this expression, V1 is the indentation volume, h is the film thickness, a is the radius of the circular delamination and the subscript 'f refers to the elastic constants of the film. Buckling occurs when the sum of indentation and residual stresses exceed the critical buckling stress for the delaminated circular section as given by, 2 9S= Ef
 
 h2
 
 2 12(l- v2) a
 
 In this expression, g 2=14.68 as the buckle occurs over the entire diameter of a clamped circular disk of radius a, referred to as single-buckling, which can only occur after removal of the indenter tip. Annular-buckling is possible when the indenter pins the center down, for which I2=42.67. Standard corrections to gIexist to account for a central hole. The strain energy release rate derived from calculation of the strain energies is
 
 G = haI2(1 - v2) + (1 -- ) h 2Ef
 
 h(
 
 G-Vf)
 
 Ef
 
 - a3)(I -
 
 Vf)
 
 (3)
 
 Ef
 
 where the slope of a/(YB vs. A/AB (radial displacement) is cx=l before buckling, and after onset of buckling decreases to a = 1- [1/{1 + 0.9021(1- vf)}]
 
 (4)
 
 364
 
 It is noted that this analysis is explicitly applicable only to circular delamination of a single film that does not spall or crack upon testing. In the case of a bilayer film, these equations are ac		
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