Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military
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Quaternary Capped In(Ga)As/ GaAs Quantum Dot Infrared Photodetectors From Materials to Devices
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
Sourav Adhikary • Subhananda Chakrabarti
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors From Materials to Devices
Sourav Adhikary Department of Electrical and Computer Engineering National University of Singapore Singapore
Subhananda Chakrabarti Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai, Maharashtra, India
ISBN 978-981-10-5289-7 ISBN 978-981-10-5290-3 (eBook) DOI 10.1007/978-981-10-5290-3 Library of Congress Control Number: 2017945268 © Springer Nature Singapore Pte Ltd. 2018 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, express or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Printed on acid-free paper This Springer imprint is published by Springer Nature The registered company is Springer Nature Singapore Pte Ltd. The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore
Preface
In(Ga)As/GaAs quantum-dot infrared photodetectors and focal plane cameras suit application in areas including space science, military battlefields and medical diagnosis. The unique properties of quantum dots, such as three-dimensional quantum confinement, discrete energy states and high carrier lifetime make them suitable for use in a variety of optoelectronics devices. The 3D confinement structures were grown in epitaxial-growth systems, such as molecular-beam epitaxy (MBE) and metal-organic chemical-vapour deposition (CVD). The Stranski–Krastanow growth method, using solid-source MBE, proves the most popular technique. Research groups have used different heterostructures to obtain high-performance detectors; however performance improvements are still required to suit application in focal-plane array (FPA) cameras. This monograph describes some alternate meth
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