Raman Determination of the Phonon Deformation Potentials in a-GaN
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Raman Determination of the Phonon Deformation Potentials in α-GaN F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil and Roger-Louis Aulombard MRS Internet Journal of Nitride Semiconductor Research / Volume 1 / January 1996 DOI: 10.1557/S1092578300001952, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001952 How to cite this article: F. Demangeot, J. Frandon, M. A. Renucci, Olivier Briot, Bernard Gil and Roger-Louis Aulombard (1996). Raman Determination of the Phonon Deformation Potentials in α-GaN . MRS Internet Journal of Nitride Semiconductor Research, 1, pp e23 doi:10.1557/ S1092578300001952 Request Permissions : Click here
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M R S
Internet Journal o f
Nitride S emiconductor Research
Volume 1, Article 23
Raman Determination of the Phonon Deformation Potentials in a-GaN F. Demangeot, J. Frandon, M. A. Renucci Laboratoire de Physique des Solides de Toulouse, Universite Paul Sabatier Olivier Briot, Bernard Gil, Roger-Louis Aulombard Groupe d'Etude des Semiconducteurs, GES-CNRS This article was received on June 4, 1996 and accepted on October 24, 1996.
Abstract Raman spectroscopy is used to study the effect of the built-in biaxial stress on the E2 and A1 (LO) q=0 phonon modes of wurtzite GaN layers deposited by metal organic vapor phase epitaxy on (0001) sapphire substrate. By means of phonon frequency shifts, the biaxial pressure coefficients of the mode frequencies are determined and used to calculate the corresponding deformation potentials. Stress calibration has been performed using reflectance data.
1. Introduction Recent breakthroughs in modern epitaxy techniques have enabled the synthesis of GaN epilayers with improved mobility and reduced residual n-type conductivity. N-type doping can be reproduceably controlled over several decades using Si donors. The absence of an efficient p-type dopant has long hampered the progress of GaN pn junction based device development. Recently, the successful activation of Mg acceptors in the GaN lattice by post growth treatments such as LEEBI [1] or in-situ thermal treatment under nitrogen [2] has enabled great progress in GaN based devices. Optical spectroscopy techniques have long been recognized as efficient methods of investigating semiconductors and their heterostructures. The Raman method is known to be a sensitive technique, in comparison to photoluminescence or reflectance, for determining strains. It can therefore be used to calibrate, mutatis mutandis, the residual strain in ternary alloy layers such as InGaN, which are important for nitride based heterostructures. Here, we investigate the strain of heteroepitaxial GaN epilayers. These layers, grown on (0 0 0 1) sapphire substrates using the MOVPE technique, have residual strains pre
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