Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interes
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Topics in Applied Physics Topics in Applied Physics is a well-established series of review books, each of which presents a comprehensive survey of a selected topic within the broad area of applied physics. Edited and written by leading research scientists in the field concerned, each volume contains review contributions covering the various aspects of the topic. Together these provide an overview of the state of the art in the respective field, extending from an introduction to the subject right up to the frontiers of contemporary research. Topics in Applied Physics is addressed to all scientists at universities and in industry who wish to obtain an overview and to keep abreast of advances in applied physics. The series also provides easy but comprehensive access to the fields for newcomers starting research. Contributions are specially commissioned. The Managing Editors are open to any suggestions for topics coming from the community of applied physicists no matter what the field and encourage prospective editors to approach them with ideas.
Kevin O’Donnell • Volkmar Dierolf Editors
Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
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Editors Professor Kevin O’Donnell Department of Physics University of Strathclyde John Anderson Building 107 Rottenrow East Glasgow, G4 0NG Scotland, UK
Professor Volkmar Dierolf Physics Department Lehigh University 16 Memorial Drive East Bethlehem, PA 18015 USA
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ISSN 0303-4216 ISBN 978-90-481-2876-1 e-ISBN 978-90-481-2877-8 Springer Dordrecht Heidelberg London New York Library of Congress Control Number: 2010924738
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Preface
It has been noted several ti
