Rare earth ion implantation for silicon based light emission: From infrared to ultraviolet
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Rare earth ion implantation for silicon based light emission: From infrared to ultraviolet W. Skorupa1,2, J. M. Sun1, S.Prucnal1, L.Rebohle2, T. Gebel2, A.N. Nazarov3, I.N. Osiyuk3, T. Dekorsy1, and M. Helm1,2 1
Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, POB 510119, D-01314 Dresden, Germany 2 nanoparc GmbH, Dresden - Rossendorf, Germany 3 Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kyiv, Ukraine corresponding author: [email protected] ABSTRACT Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm , Er3+) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed. 3+
1. INTRODUCTION Combining silicon-based electronic circuits with optoelectronic functionality is one of the key challenges for the future semiconductor technology. As the packaging density of transistors becomes higher and higher in the ultra-large-scale integrated (ULSI) circuits, the problems of overheating and signal delay become serious from an increase of metallic interconnects. One possible solution could be optical interconnects integrated with silicon technology. The implementation of silicon-based optical interconnection requires light emitters, waveguides, modulators, and photodetectors. Unfortunately, silicon is badly suited to operate as a light emitter due to its indirect band gap of about 1.1 eV. During the last 15 years an enormous research and development activity started throughout the international scene. In this framework it was successfully demonstrated that ion beam processing of silicon and silicon dioxide can lead to convincing solutions regarding silicon based light emission. There exist already numerous articles reviewing the state of the art of light emitters based on silicon-silicon dioxide technology. The reader is kindly referred to the proceedings of the recent Workshop on „Towards the First Silicon Laser“ by Pavesi et al. [1] and references therein to get a satisfactory review of the topic. In this paper recent work rega
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