Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoele
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Reduction in thermal conductivity and electrical resistivity of indium and tellurium co-doped bismuth selenide thermoelectric system Ganesh Shridhar Hegde1, A. N. Prabhu1,*
1 2
, R. Y. Huang2, and Y. K. Kuo2,*
Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, India Department of Physics, National Donghua University, Hualien 974, Taiwan
Received: 13 June 2020
ABSTRACT
Accepted: 29 August 2020
Polycrystalline samples of (Bi1-xInx)2Se2.7Te0.3 (x = 0.00, 0.02, and 0.04) were prepared by the solid-state reaction technique. X-ray diffraction pattern confirms that the polycrystalline samples have a hexagonal structure with spacegroup R 3 m. The surface morphologic study reveals the existence of porous
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The Author(s) 2020
behavior in the studied samples due to the volatilization of Selenium. Energy dispersive X-ray analysis validates the expected and observed elemental composition of the samples. Electrical resistivity has shown metallic behavior. Hall effect and Seebeck coefficient measurements indicate the p-type and n-type conduction for the pristine sample Bi2Se3 and the (Bi1-xInx)2Se2.7Te0.3 samples, respectively. The thermal conductivity and electrical resistivity were found to reduce by 7.5 and 9 times, respectively, for (Bi0.96In0.04)2Se2.7Te0.3 compared to the pristine sample Bi2Se3.
1 Introduction One of the best solutions for renewable energy is thermoelectric (TE) materials, which convert waste heat into electricity and vice versa and provide better management for clean and green energy production [1]. The efficiency of thermoelectric material is determined by a dimensionless quantity called the thermoelectric figure of merit (ZT) and is calculated 2
using the formula ZT ¼ SjqT, where S is the Seebeck coefficient, j is the total thermal conductivity, q is the
electrical resistivity, and T is the absolute temperature [2, 3]. The chalcogenide materials like Bismuth Selenide and Bismuth Telluride are the reliable lowtemperature TE materials that are used for Peltier cooling devices. The alloys based on Bismuth Selenide and Bismuth Telluride have been studied extensively as representative materials for thermoelectric applications near room temperature. The most challenging task in search of high-performance TE materials is to simultaneously control the electrical conductivity and thermal conductivity [4].
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https://doi.org/10.1007/s10854-020-04383-7
J Mater Sci: Mater Electron
Adam et al. [5] have obtained the power factor of 131 9 102 lW/mK2 for 2D material Bi2Se3-xTex. Ali et al. [6] have reported Bi2Te2.7Se0.3 tetradymite by the physical vapor deposition method. Kadel et al. [7] have reported Bi2Se3 thin film with ZT of 0.096 at 523 K, synthesized by nanoscale route method. Quentin et al. [8] have reported the thermoelectric performance of Cu-doped n-type Bi2Te3 with ZT of 0.1 at 300 K. Margarita et al. [9] have reported vapor– solid synthesis of Bi2S
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