Room Temperature Deposition of High Dielectric Constant, High Density Ceramic Thin Films
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Room Temperature Deposition of High Dielectric Constant, High Density Ceramic Thin Films K. Chen, M. Nielsen, S. Soss, S. Liu, E.J. Rymaszewski, and T.-M. Lu Center for Integrated Electronics and Electronics Manufacturing Rensselaer Polytechnic Institute, Troy, NY 12180 ABSTRACT Future high-performance integrated circuits and electronic packaging technology require the integration of many passive components, including high storage capacitors, on the systems. Because of the low melting temperature metal lines and polymer dielectrics in these electronic systems, one cannot employ most of the existing high temperature deposition techniques to grow thin film components. In this paper, we will report our recent work on the room temperature deposition of amorphous ceramic thin films, including BaxTi 2.,Oy and SiO,, using the newly developed partially ionized beam technique. This technique utilizes a small percent (
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