Room-temperature ultraviolet-ozone annealing of ZnO and ZnMgO nanorods to attain enhanced optical properties
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Room-temperature ultraviolet-ozone annealing of ZnO and ZnMgO nanorods to attain enhanced optical properties Md Jawaid Alam1, Punam Murkute2, Sushama Sushama1, Hemant Ghadi1, Shubham Mondal3, Sritoma Paul3, Debabrata Das1, Sushil Kumar Pandey4, and Subhananda Chakrabarti1,*
1
Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra 400 076, India Centre for Research in Nanotechnology & Science, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra 400 076, India 3 Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Nadia, West Bengal 741235, India 4 Department of Electronics and Communication Engineering, National Institute of Technology Karnataka, Suratkal, Karnataka 575025, India 2
Received: 15 June 2020
ABSTRACT
Accepted: 4 September 2020
ZnO and ZnMgO nanorods have proven to be promising materials for sensing, UV and deep UV based optoelectronic applications. A major drawback of ZnO and ZnMgO based thin films and nanorods is the presence of native point defects which deteriorates their optical efficiency and becomes an impediment to their efficient device applications. The furnace and rapid thermal annealing processes have overcome this up to a great extent but being high temperature processes, they put many fabrication and technological limits in device fabrication. Especially keeping an eye on the future flexible devices, herein we report ultraviolet-ozone (UVO) annealing as a room-temperature, simple and cost-effective annealing method to improve the optical efficiency of ZnO and ZnMgO nanorods along with control of defect states. The ZnO and ZnMgO nanorods were grown by hydrothermal method and annealed in UVO irradiation. UVO annealing substantially improved near band emission and suppressed defect band emissions. It is found that zinc interstitial atoms migrate from the top portion of ZnO nanorods towards the bottom of nanorods after UVO annealing, resulting in reduced zinc interstitial defects in the top portion of nanorods. X-ray diffraction results showed improvement in structural properties. XPS results confirmed suppression of oxygen vacancies and zinc interstitials and improvement in lattice oxygen in the ZnO nanorods after UVO annealing. Optimum times of UVO annealing for ZnO and ZnMgO nanorods were 30 and 50 min respectively. These findings will be helpful for the further development
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Springer Science+Business
Media, LLC, part of Springer Nature 2020
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https://doi.org/10.1007/s10854-020-04418-z
J Mater Sci: Mater Electron
of ZnO and ZnMgO nanorods based high performance optoelectronic devices and sensors.
1 Introduction One-dimensional nanostructures have gathered much importance owing to their many unique properties and the possibility that they can be used for future electronics and photonics. Zinc oxide (ZnO) nanostructures have better optical properties as compared to their thin film counterpart because of their better crysta
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