Schottky Diodes on MOCVD Grown AlGaN Films
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Schottky Diodes on MOCVD Grown AlGaN Films. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin and Joan M. Redwing MRS Internet Journal of Nitride Semiconductor Research / Volume 3 / January 1998 DOI: 10.1557/S1092578300001095, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300001095 How to cite this article: A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, D. W. Greve, M. Skowronski, M. Shin and Joan M. Redwing (1998). Schottky Diodes on MOCVD Grown AlGaN Films. . MRS Internet Journal of Nitride Semiconductor Research, 3, pp e37 doi:10.1557/S1092578300001095 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Schottky Diodes on MOCVD Grown AlGaN Films. A. Y. Polyakov1, N.B. Smirnov1, A.V. Govorkov1, D. W. Greve2, M. Skowronski3, M. Shin3 and Joan M. Redwing4 1Institute
of Rare Metals, of Electrical and Computer Engineering, Carnegie Mellon University, 3Department of Materials Science and Engineering, Carnegie Mellon University, 4Epitronics/ATMI, 2Department
(Received Monday, June 22, 1998; accepted Friday, October 16, 1998)
Au Schottky diodes were prepared by vacuum evaporation or by plasma sputtering on n-AlGaN(Si) films with Al mole fractions of 0, 0.11 or 0.23. The barrier heights were deduced from C-V and I-T measurements. The difference between the C-V and I-T results was less than 0.1 eV for the barriers deposited at 300 °C on HF etched samles with prior in situ heating at 450 °C. For low deposition temperatures (about 150°C) C-V and I-T methods give results differing by some tenths of an eV. For deposition temperatures exceeding 450°C the diodes were very leaky. The barrier heights were 0.8 eV, 0. 9 eV and 1.1 eV for AlGaN with compositions of 0, 0.11 and 0.23. For plasma sputtered diodes on GaN and AlGaN (x=0.11) samples, the difference in C-V and I-T results was quite considerable and admittance spectroscopy indicated the presence of deep electron traps at 0.12-0.14 eV that were absent in vacuum evaporated diodes. For similar diodes on AlGaN(x=0.23) samples the results of C-V and I-T measurements were very close and no traps at 0.12-0.14 eV could be detected. This difference is most likely due to damage caused by low energy ions. More Al-rich films are less susceptible to such damage. Persistent photocapacitance was observed in n-AlGaN Schottky diodes after illumination at 85K.
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Introduction
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Ternary solid solutions of AlGaN are currently under intense study for applications in solar-blind photodetectors and in high-power/high-frequency/high-temperature field effect transistors (see e.g. [1]). Schottky diodes are important building blocks for both types of devices. However, experimental work on Schottky diodes until now has been main
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