Screen printing coating of (ZnO) 0.8 (CdO) 0.2 material for optoelectronic applications
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Screen printing coating of (ZnO)0.8(CdO)0.2 material for optoelectronic applications Rayees Ahmad Zargar1,2 · Peerzada Ajaz Ahmad1 · Muzafer Ahmad Sheer Gogre1 · Malik Mubasher Hassan2,3 Received: 6 February 2020 / Accepted: 13 August 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract Here we report X-ray response and optical properties of composite (ZnO)0.8(CdO)0.2 thick film deposited by simple, easy and low cost screen printing technique on glass substrates followed by sintering at 500 °C. X-ray diffraction pattern confirms the polycrystalline structure of the film having hexagonal and cubic structures with preferred orientations of grains along (101) plane for ZnO and (111) plane for CdO. While Raman spectra exhibited strong peaks of E 2 (high) phonon and overtone of surface phonon modes at 431 cm−1 and 1145 cm−1 respectively. The absorption coefficient and band gap which are essential for the optoelectronic applications were determined by using UV–visible absorbance data. Photoluminescence spectroscopy of the (ZnO)0.8(CdO)0.2 films showed a strong emission peak at 407 nm near the band edge along with a weak green–yellow emission peak spanning the wavelength range from 450 to 500 nm. The Arrhenius plot of DC conductivity shows semiconductor nature with existing activation energy of about 0.33 eV. The film thickness was measured by profilometry, obtaining a thickness of around 3 µm. Keywords Screen printing · X-ray diffraction · Raman · PL · UV–visible study and activation energy
1 Introduction Semiconductor metal oxide coated films are widely used for optoelectronic applications because their absorption edge falls in the short wavelength visible-light region especially for laser diodes (LDs) and light emitting diodes (LEDs) (Joishy and Rajendra 2017; Purohit et al. 2015). In this respect ZnO a very well known and unique wide band-gap semiconductor, having band-gap energy of the order of (3.37 eV) in the near ultraviolet region and has several advantages over GaN with some potential applications * Rayees Ahmad Zargar [email protected] 1
Department of Physics, Baba Ghulam Shah Badshah University, Rajouri, (J&K) 185234, India
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Material Science Lab. University Polytechnic, BGSBU, Rajouri, (J&K) 185234, India
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Department of ITE, Baba Ghulam Shah Badshah University, Rajouri, (J&K) 185234, India
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like, the commercial availability of bulk single crystal and large exciton binding energy (~ 60 meV compared to 25 meV for GaN), absorbs larger fractions of solar radiation at room temperature (RT) and even brighter light emission obtained than GaN photonics (Kumari and Kumar 2020; Sonawane et al. 2009). CdO is also an n-type degenerate semiconductor of cubic structure with a direct band gap value of the order of (~ 2.3–2.5 eV) with desirable characteristics like, low electrical resistivity and high optical transmittance in the visible region of the solar spectrum (Peter and Lee 2011). So the band-gap of ZnO c
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