Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Si
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ICAL SCIENCE OF MATERIALS
Secondary-Ion Mass Spectroscopy for Analysis of the Implanted Hydrogen Profile in Silicon and Impurity Composition of Silicon-on-Insulator Structures N. D. Abrosimovaa,*, M. N. Drozdovb, and S. V. Obolenskya,c a
Lobachevsky National Research State University, Nizhny Novgorod, 603600 Russia Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 607680 Russia c Research Radiophysical Institute, Lobachevsky National Research State University, Nizhny Novgorod, 603950 Russia *e-mail: [email protected] b
Received April 3, 2020; revised April 3, 2020; accepted April 3, 2020
Abstract—Theoretical and experimental data are reported for the distribution of hydrogen in silicon in SiO2–Si structures after the implantation of hydrogen. Hydrogen is implanted under conditions used in preparing silicon-on-insulator structures by the hydrogen transfer technology. A technique for quantitative estimation of implanted hydrogen high concentrations in silicon using secondary-ion mass spectrometry is suggested. It includes the quantitative calibration of the hydrogen atom concentration and normalization of the depth of analysis from sputtering time. Data for the implanted hydrogen depth distribution in silicon and in Si–SiO2 structures are presented. The lateral uniformity and temporal stability of implanted structures have been monitored. DOI: 10.1134/S106378422011002X
INTRODUCTION Silicon-on-insulator (SOI) structures offer clear advantages over bulk silicon consisting in high stability against thermal, baric, and ionizing actions and are viewed as a promising material of semiconductor microelectronics. Implantation of hydrogen is a key step in the production of SOI structures by the hydrogen transfer technology (SmartCut or DeleCut method) and has a significant influence of the quality of products. This may show up not only in the position and uniformity of the cut, but also in changes in the electrical state, energy levels, and diffusion coefficient of impurities in the active (device) layer and buried insulator. The aim of this study was to determine the hydrogen concentration profile and impurity composition in hydrogen-implanted SiO2–Si and Si structures. TEST OBJECTS The test objects were silicon wafers and SiO2–Si structures implanted by hydrogen to a depth of 100– 1000 nm (with an implantation energy and implantation dose of 30–120 keV and 4–5 × 1016 cm–2, respectively) and SOI structures prepared by the hydrogen transfer technology.
HYDROGEN CONCENTRATION DETERMINATION The aim of quantitative analysis was to find the element concentrations in test samples. The impurity concentration was found by the method of relative sensitivity factors. This method relies upon the fact that the impurity atom secondary intensity is a linear function of impurity concentration, which allows using a small set of test structures to calibrate sensitivity for empirical research. This method was applied to a test sample consisting of a boron-doped silicon wafer with a resistivity of 12
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