Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures
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Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures JA. Grenko, CL. Reynolds, Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis and Z. Sitar MRS Internet Journal of Nitride Semiconductor Research / Volume 9 / January 2004 DOI: 10.1557/S1092578300000405, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000405 How to cite this article: JA. Grenko, CL. Reynolds, Jr, R. Schlesser, K. Bachmann, Z. Rietmeier, Robert F. Davis and Z. Sitar (2004). Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures . MRS Internet Journal of Nitride Semiconductor Research, 9, pp e5 doi:10.1557/S1092578300000405 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures JA. Grenko1, CL. Reynolds Jr1, R. Schlesser1, K. Bachmann1, Z. Rietmeier1, Robert F. Davis1 and Z. Sitar1 1Department
of Materials Science and Engineering, North Carolina State University,
(Received Wednesday, April 7, 2004; accepted Wednesday, July 14, 2004)
Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures. This result is a significant step forward in the fabrication of group III-nitride devices and one-dimensional photonic bandgap (PBG) structures in the deep UV. Based on initial results from thick GaN layers, a method was developed to achieve self-stopping selective etching of thin GaN layers in AlGaN/GaN and AlN/ GaN heterostructures. Selective PEC etching requires the use of a suitable light source with photon energies larger than the bandgap of GaN, but smaller than that of AlGaN or AlN, thus enabling selective hole generation in the GaN layers to be etched. Additionally, it is imperative to use an electrolyte that supports PEC etching of GaN without chemically etching AlGaN or AlN.
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Introduction
Motivation for the work reported here was to develop a suitable processing technique for nanoscale patterning of multiple-period heterostructures , thus enabling the fabrication of AlN-based one-dimensional photonic bandgap structures (1D-PBGs). Potential applications include nanophotonic devices, UV photonic integrated circuits, and in particular, 1D-PBG-based non-linear optical frequency converters. The same processing technique is suitable for the fabrication of integrated, passive optical elements, including Bragg reflectors, interference filter structures, and for electronic devices. For these applications, the ability to fabricate well defined, flat and plane-parallel interfaces with ultimate tolerances better than 0.1% is essent
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