Selective Oxidation and Resistivity Reduction of Cu-Mn Alloy Films for Self-forming Barrier Process
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1079-N03-09
Selective Oxidation and Resistivity Reduction of Cu-Mn Alloy Films for Self-forming Barrier Process Jun Iijima, Yoshito Fujii, Koji Neishi, and Junich Koike Department of Materials Science, Tohoku University, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan Abstract Optimum conditions of annealing atmosphere and temperature for the reduction of Mn content from the Cu-Mn alloy layer in Cu-Mn self-forming barrier process were investigated. Mn was selectively oxidized at the surface by annealing in Ar gas containing an impurity level of O2 (
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