Selective Voltage-Controlled Hole Spin in Non-Magnetic Resonant Tunneling Diodes
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Selective Voltage-Controlled Hole Spin in Non-Magnetic Resonant Tunneling Diodes A. C. R. Bittencourt,1 G. E. Marques,2 Y. Galvão Gobato,3 A.Vercik,4 I. Camps,5 and M. J. S. P Brasil6 1 Departamento de Física, Universidade Federal do Amazonas, 67.077-000, Manaus, Amazonas, Brazil. Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil 3 Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil, and Universidade Federal de Santa Catarina, Florianópolis, SC, Brasil. 4 Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil, and Faculdade de Zootecnia e Engenharia de Alimentos, Departemento de CIências Básicas, Pirassununga, 13635-900, SP, Brasil 5 Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brasil. 6 Grupo de Propriedades Ópticas, Instituto de Física Gleb Wataghin, Universidade de Campinas, 13083-970, Campinas, SP, Brasil (Dated: April 5, 2004) 2
We report theoretical and experimental observation of photoexcitated hole spin selection in GaAs/GaAlAs n-i-n in resonant tunneling diodes. When subjected to magnetic and electric parallel …elds, the spin splitted hole levels leads to several peak structure in the transmissivity. These experimental results are interpreted as an evidence of tunneling transport through spin polarized hole levels of non-magnetic diodes.
Resonant tunneling of holes in double barrier resonant tunneling structures (DBRTS) still attracts great attention due to both theoretical interest as well as technological applications in new areas such as spintronics. Whereas electron transport is mostly well understood, the complexity of the valence band structure gives rise to a variety of phenomena1–4 that strongly in‡uences all properties of a two-dimensional (2D) hole systems and deserves attention of researchers. The e¤ects of a magnetic …eld on transport have been extensively studied and the magneto-tunneling have become a widely used spectroscopic technique. In this work, we report the theoretical and experimental observation of valence-band Landau level structure in n i n DBRTS, using photo-induced magneto-tunneling techniques. Here, the strong valence band admixture and the strong and nonlinear Zeeman splitting of hole carriers determine the resonant peak position as well as the overall general shape of the magneto-current in a given sample. The structures used in the work are symmetric n i n GaAs/Al0:35 Ga0:65 As thick diodes with 10-nm i-Al0:35 Ga0:65 As barriers and a 5-nm i-GaAs well layers. The double barrier system is enclosed by a 60 nm i-GaAs and a 300nm Si-doped n+ -GaAs (~1018 cm 3 ) layers grown on both sides of the structure. Annular contacts on the top of 500 m 600 m mesas allow photocurrent measurements under applied voltage. The 488 nm line of a Coherent Ar+ ion laser was used as photoexcitation source. I.
LANDAU-STARK HOLE STATES
The electronic structure of holes in a quantum well (QW) layer
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