Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes
- PDF / 1,057,158 Bytes
- 6 Pages / 595.276 x 785.197 pts Page_size
- 43 Downloads / 314 Views
THE EUROPEAN PHYSICAL JOURNAL B
Regular Article
Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes Dan-Na Liu 1 , Yong Guo 1,2,a , and Yu Song 3 1
2 3
Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, P.R. China Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China Microsystem and Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Chengdu 610200, P.R. China Received 30 June 2020 / Received in final form 15 July 2020 / Accepted 16 July 2020 Published online 5 October 2020 c EDP Sciences / Societ`
a Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020 Abstract. We investigate the transport properties of double-barrier resonant tunneling diodes based on silicene nanoribbons by means of transfer matrix method under the external electric field. It is found that the transmission shows resonance suppression (enhancement) under the positive (negative) bias. The spindependent and valley-dependent negative differential resistance (NDR) characteristics are found both in the symmetric and asymmetric structures. The influence of various factors on the I-V characteristics is analyzed, it is found that the NDR characteristics can be greatly enhanced by the structural parameters, Fermi energy, and band gap. What should be laid stress on is that the maximum peak-to-valley ratio (PVR) can reach up to 13 by regulating the band gap. Proposed structure here could be the base of other high-frequency electronics devices.
1 Introduction Since Esaki’s pioneering work in 1958 [1], negative differential resistance (NDR) characteristics have been experimentally and theoretically applied to a variety of structures, such as semiconductor heterojunctions [2], semiconductor superlattices [3], carbon nanotubes [4], semiconductor step-barrier structures [5] and molecular devices [6]. The rise of graphene [7] as an emerging type of two-dimensional material opens a new path for nanoelectronics. Compared with other semiconductor structures, graphene-based structures have stronger interband tunneling and higher carrier mobility, so they are more suitable choices for tunneling devices. Since the advence of graphene, many works focus on the research of NDR. Theoretical or experimental studies have shown that graphene single-barrier diodes [8], zigzag graphene nanoribbons [9], armchair graphene nanoribbons [10], armchair superlattices [11], double-barrier resonant tunneling diodes [12] and three-terminal field-effect transistors [13] all exhibit the NDR phenomena. However, but graphene-based NDR devices have two limitations: the zero-band gap of graphene suppresses the production of NDR, and graphene is difficult to integrate with existing silicon-based technologies. Although the band gap can be regulated by building the graphene nanoribbons (GNR) [14,15] or superimposing two monolayers to form a bilayer a
e-mail: [email protected].
Data Loading...
