Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs
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Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs Emmanuel Valentin†, Stephane Auvray*, Arianna Filoramo†, Aline Ribayrol†, Marcelo Goffman*, Laurence Capes†, Jean-Philippe Bourgoin*, Jean-Noel Patillon† Laboratoire Electronique Moléculaire ; Centre de Recherche Motorola – CEA Saclay † Centre de Recherche Motorola, Motorola Labs, Espace Techno. Saint Aubin, 91193 Gif-surYvette Cedex, France * CEA de Saclay, DSM/DRECAM/SCM, 91191 Gif-sur-Yvette, France ABSTRACT We describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices. INTRODUCTION Since their discovery in 1991 by Iijima [1], carbon nanotubes have generated great interest and research studies. In particular, single wall carbon nanotubes (SWNTs) exist as semiconducting or metallic wires. They have been used to demonstrate molecular devices like transistors, diodes or SET. The recent demonstrations of room temperature SET [2] and of SWNT transistors showing gain above unity [3] were immediately applied to the realization of logic gates with a lateral channel extension reduced to 1 nm [4,5]. However, these demonstrations are still based on a random deposition of nanotubes on a substrate. In order to reliably obtain a large number of nanotube FETs, an efficient assembly strategy must be developed. The CVD patterned growth allowed to fabricate a large number of FETs, but the relatively large diameter distribution (1-4 nm) of the SWNTs induces variations of device performances [6]. Laser ablated SWNTs dispersed in a solution provide reliable materials which have the potential to become technologically relevant ones if the recent promises of separation between semi-conducting and metallic SWNTs [7] are confirmed. The strategy we have chosen uses self-assembly of SWNTs synthesized by the laser ablation technique. The approach presented in this work is based on the local functionalization by self-assembled monolayers (SAMs) modifying the surface properties of a prepatterned substrate. This in turn affects the interactions between the sidewalls of a CNT and the surface so that the CNTs are preferentially attracted and bonded there. This kind of technique has already been proposed in the literature, relying respectively on a local chemical functionalization of the surface [8] or on an electrostatic
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