Semiconductive Properties of Alternating Mg/C Multi-layer Films with Hydroxylation Treatment
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Semiconductive Properties of Alternating Mg/C Multi-layer Films with Hydroxylation Treatment Masafumi Chiba1, Daisuke Endo1, Kenichi Haruta2, Hideki Kimura2, and Hideo Kiyota3 Department of Materials Chemistry, Tokai University, 317 Nishino, Numazu, Shizuoka, 410-0395, Japan 2 Department of Electrical and Electronic Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa, 259-1292, Japan 3 Department of Mechanical Systems Engineering, Tokai University, 9-1-1 Toroku, Kumamoto, Kumamoto, 862-8652, Japan 1
ABSTRACT A Mg(OH)2–C transparent conductive film was prepared using the sputtering method by the initial formation of a Mg-C film generated by the alternate layering of Mg and C on a rotating substrate and subsequent exposure of the film to atmospheric water vapor. To examine the influence exerted by the Mg/C layers of the starting film sample on semiconductivity, evaluations of the electrical conductivity properties of the film during the hydroxylation process and the optical properties after the hydroxylation process were carried out. As a result, although no effects on the characteristics of the electrical conductivity properties associated with the composition or number of layers in the films could be confirmed, it was determined that the films possessed the characteristics of semiconductors. On the other hand, the optical properties were found to be affected by the composition and number of layers of the Mg/C films. INTRODUCTION Currently, among the various transparent electrically conductive materials used in flatpanel displays (FPD) and the like, indium tin oxide (ITO) has become the most standard material [1]. However, In, which is the main raw material for these applications, is a rare metal, and its Clarke number is 1 × 105 [2]. Accordingly, owing to resource depletion and the consequential soaring prices, research into alternative materials is being actively pursued [3-5]. Our research group has succeeded in the development of Mg(OH)2 doped with C as a new transparent electrically conductive material to replace ITO [6-8]. This material is prepared by the incorporation of C into the Mg(OH)2 lattice by a process involving the alternate layering of Mg and C on a rotating substrate by the sputtering method followed by hydroxylation, which affords electrical conductivity. The film preparation method by the rotating-substrate used here facilitates the variation of the amount of Mg and C deposited on the substrate. At the same time, the approach makes it possible to adjust the composition, the layer thickness, and the number of layers of each atomic species. As a result, even if the film thickness is consistent, it is possible to prepare materials in which the number of layers of each atom and the thickness of each layer
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differ. For this reason, adjustments to the rotation speed of the substrate and the C concentration at the time of layer formation are expected to affect the material properties. Thus, in the present research, because differences in the layer thickness and the composition of
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