Semiconductor Device Physics and Simulation
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put mo
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MICRODEVICES Physics and Fabrication Technologies Series Editors: Ivor Brodie and Arden Sher SRI International Menlo Park, California
Recent volumes in the series: COMPOUND AND JOSEPHSON HIGH-SPEED DEVICES Edited by Takahiko Misugi and Akihiro Shibatomi ELECTRON AND ION OPTICS Miklos Szilagyi ELECTRON BEAM TESTING TECHNOLOGY Edited by John T. L. Thong ORIENTED CRYSTALLIZATION ON AMORPHOUS SUBSTRATES E. I. Givargizov PHYSICS OF HIGH-SPEED TRANSISTORS Juras Pozela THE PHYSICS OF MICRO/NANO-FABRICATION Ivor Brodie and Julius J. Muray PHYSICS OF SUBMICRON DEVICES David K. Ferry and Robert O. Grondin THE PHYSICS OF SUBMICRON LITHOGRAPHY Kamil A. Valiev RAPID THERMAL PROCESSING OF SEMICONDUCTORS Victor E. Borisenko and Peter J. Hesketh SEMICONDUCTOR ALLOYS Physics and Materials Engineering An-Ban Chen and Arden Sher SEMICONDUCTOR DEVICE PHYSICS AND SIMULATION J. S. Yuan and J. J. Liou SEMICONDUCTOR LITHOGRAPHY Principles, Practices, and Materials Wayne M. Moreau SEMICONDUCTOR PHYSICAL ELECTRONICS Sheng S. Li A Continuation Order Plan is available for this series. A continuation order will bring delivery of each new volume immediately upon publication. Volumes are billed only upon actual shipment. For further information please contact the publisher.
Semiconductor Device Physics and Simulation J. S. Yuan and J. J. Liou University of Central Florida Orlando, Florida
Springer Science+Business Media, LLC
Library of Congress Cataloging-in-Publication Data Yuan, J. S. Semiconductor device physics and s i m u l a t i o n / J.S. Yuan and J . J . Liou. p. cm. — (Microdevices) I n c l u d e s b i b l i o g r a p h i c a l r e f e r e n c e s and index. ISBN 978-1-4899-1906-9 1. Semiconductors—Computer s i m u l a t i o n . 2. J u n c t i o n t r a n s i s t o r s -Computer s i m u l a t i o n . I. Liou, J u i n J. I I . T i t l e . I I I . S e r i e s . TK7871.85.Y83 1998 621.3815'2'0113--dc21 98-18553 CIP
ISBN 978-1-4899-1906-9 ISBN 978-1-4899-1904-5 (eBook) DOI 10.1007/978-1-4899-1904-5 © Springer Science+Business Media New York 1998 Originally published by Plenum Press, New York in 1998 Softcover reprint of the hardcover 1st edition 1998 http://www.plenum.com 10987654321 All rights reserved No part of this book may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, microfilming, recording, or otherwise, without written permission from the Publisher
To my late father and my mother
-J. S. Yuan
Preface The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in suc