Ferroelectric-Gate Field Effect Transistor Memories Device Physics a
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory
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Byung-Eun Park Hiroshi Ishiwara Masanori Okuyama Shigeki Sakai Sung-Min Yoon Editors
FerroelectricGate Field Effect Transistor Memories Device Physics and Applications
Topics in Applied Physics Volume 131
Series editors Mildred S. Dresselhaus, Cambridge, USA Young Pak Lee, Seoul, Korea, Republic of (South Korea) Paolo M. Ossi, Milan, Italy
Topics in Applied Physics is a well-established series of review books, each of which presents a comprehensive survey of a selected topic within the area of applied physics. Edited and written by leading research scientists in the field concerned, each volume contains review contributions covering the various aspects of the topic. Together these provide an overview of the state of the art in the respective field. Topics in Applied Physics is addressed to all scientists at universities and in industry who wish to obtain an overview and to keep abreast of advances in applied physics. The Managing Editors are open to any suggestions for topics coming from the community of applied physicists no matter what the field and encourage prospective book editors to approach them with ideas. 2015 Impact Factor: 0.889
More information about this series at http://www.springer.com/series/560
Byung-Eun Park Hiroshi Ishiwara Masanori Okuyama Shigeki Sakai Sung-Min Yoon •
•
Editors
Ferroelectric-Gate Field Effect Transistor Memories Device Physics and Applications
123
Editors Byung-Eun Park School of Electrical and Computer Engineering University of Seoul Seoul Korea, Republic of (South Korea)
Shigeki Sakai National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Japan
Hiroshi Ishiwara Frontier Collaborative Research Center Tokyo Institute of Technology Yokohama Japan
Sung-Min Yoon Department of Advanced Materials Engineering for Information and Electronics Kyunghee University Yongin Korea, Republic of (South Korea)
Masanori Okuyama Graduate School of Engineering Science Osaka University Osaka Japan
ISSN 0303-4216 Topics in Applied Physics ISBN 978-94-024-0839-3 DOI 10.1007/978-94-024-0841-6
ISSN 1437-0859
(electronic)
ISBN 978-94-024-0841-6
(eBook)
Library of Congress Control Number: 2016944338 © Springer Science+Business Media Dordrecht 2016 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and in
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