Sensitive detection using heterostructure of black phosphorus, transition metal di-chalcogenides and MXene in SPR sensor
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Sensitive detection using heterostructure of black phosphorus, transition metal di‑chalcogenides and MXene in SPR sensor Sarika Pal1 · Alka Verma2 · Y. K. Prajapati3 · J. P. Saini4 Received: 11 May 2020 / Accepted: 14 September 2020 / Published online: 24 September 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This work presents van der Waals heterostructure (vdWh) of Black phosphorus (BP)/Transition metal di-chalcogenides (TMDs)/MXene (Ti3C2Tx) based highly sensitive novel SPR sensor for biochemical sensing. 2D layered nature of BP, TMDs, and MXene allow them to form van der Waals heterostructure by vertically stacking them together to get exotic electronic and optical properties useful for surface plasmon resonance (SPR) sensing. Unique properties of MXene like its layered architecture, larger surface area, highly accessible hydrophilic surface terminations, chemical stability, smaller work function, and strong light-matter interaction are utilized to enhance the sensitivity of the proposed sensor. The proposed work theoretically analyzes its sensitivity (S) and compares it with other structures. The anisotropic nature of 2D layered BP is used to tune the sensitivity of the proposed sensor. The highest sensitivity of 3 88ο/RIU is achieved at 633 nm wavelength for W S2 tri-layer in the proposed biochemical sensor. The SPs field variation along normal to interface validates the highest sensitivity obtained for the proposed heterostructure SPR sensor through field plots. These results will open an innovative route to design and develop such an SPR biochemical sensor practically, with fabrication possibilities of MXene with TMDs and BP. Keywords Mxene · Black phosphorus (BP) · Anisotropy · Transition metal di-chalcogenides (TMDs) · Surface plasmon resonance (SPR) · Sensitivity · Van der waals heterostructures (vdWh)
Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03998-1) contains supplementary material, which is available to authorized users. * Y. K. Prajapati [email protected] Sarika Pal [email protected] Alka Verma [email protected] J. P. Saini [email protected] 1
Department of Electronics Engineering, National Institute of Technology (NIT), Uttarakhand 246174, U.K., India
2
Department of Electronics and Communication Engineering, Institute of Engineering and Rural Technology, Prayagraj 211002, U.P., India
3
Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology (MNNIT), Allahabad, Prayagraj 211004, U.P., India
4
Department of Electronics and Communication Engineering, Netaji Subhas University of Technology (NSUT), New Delhi 110078, India
1 Introduction 2D layered materials are well known for their remarkable application in photonic, optoelectronics, sensing, plasmonic devices, together with possibilities of their integration with the existing devices [1–3]. In recent years, 2D layered materials and their heterostruct
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