Silicon Nanocavity Based Light Sources
- PDF / 916,297 Bytes
- 11 Pages / 612 x 816.96 pts Page_size
- 45 Downloads / 185 Views
Silicon Nanocavity Based Light Sources 1
2
3
1
4
4
Yiyang Gong , Satoshi Ishikawa , Szu-Lin Cheng , Yoshio Nishi , Selcuk Yerci , Rui Li , Luca Dal Negro , Jelena Vuckovic Department of Electrical Engineering, 438 Via Pueblo, Stanford, CA, 94305, USA Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama, 235-0017, Japan Department of Material Science and Engineering, Stanford, CA, 94305, USA Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215, USA Division of Material Science, Boston University, Boston, MA 02215, USA 4,5
1
1 2 3 4 5
ABSTRACT We develop Si-based nano-photonic devices for the control of light at the nano-scales. We design high quality (Q) factor photonic crystal nanobeam cavities for a variety of Si compatible materials with low index, such as silicon rich oxide and silicon nitride, all with Q > 9,000 and small mode volumes. We apply these cavity designs to active materials such as Sinanocrystal doped silicon oxide and Er doped silicon nitride. By placing emitters in these cavities, we demonstrate that the cavity enhances emission processes. We show that the free carrier absorption process is greatly enhanced in the nanobeam cavities at both room and cryogenic temperatures. In addition, we demonstrate that nanobeam cavities made of Er-doped amorphous silicon nitride have enhanced absorption and gain characteristics compared to earlier designs that included silicon in the cavity. Because of the reduced losses, we observe linewidth narrowing and material transparency at both room temperature and cryogenic temperatures. INTRODUCTION Optical devices have drawn great amounts of attention as enablers of high bandwidth, low energy communications. The establishment of electronic computation devices on a silicon complementary metal-oxide-semiconductor (Si-CMOS) platform requires that optical interconnects be silicon-compatible as well. Because silicon is an indirect bandgap material and not an efficient light emitter, there have been significant efforts to incorporate direct gap III/V materials with CMOS processing. An alternative to such fabrication is to develop devices that enhance the emission of novel silicon-compatible materials. In addition to optical communications, silicon-compatible optical emitters can have a large impact in sensor, lighting, and display technologies. In this work, we demonstrate the control of emission from silicon nanocrystals and Er-doped amorphous silicon nitride (both of which are compatible with silicon fabrication processes) when coupled to photonic crystal cavities. The emission and control of light on the nanoscales can be achieved by a variety of optical cavities [1], where high quality (Q-) factor and low mode volume (Vm) cavities increase the light-matter interaction. In the weak-coupling, or Purcell, regime of cavity quantum electrodynamics (cQED), the spontaneous emission (SE) rate of an emitter coupled to a cavity is enhanced by the Purcell factor, which is proportional to Q/Vm . One type of cavity that e
Data Loading...
