Silicon Nanowire-Based Memristive Devices
We give a general overview on Silicon nanowire-based multi-terminal memristive devices. The functionality of the devices can be used for logic, memory, and sensing applications. It is shown that three- and four- terminal memristive devices can be used for
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Memristors and Memristive Systems
Memristors and Memristive Systems
Ronald Tetzlaff Editor
Memristors and Memristive Systems
123
Editor Ronald Tetzlaff Faculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden Dresden, Germany
ISBN 978-1-4614-9067-8 ISBN 978-1-4614-9068-5 (eBook) DOI 10.1007/978-1-4614-9068-5 Springer New York Heidelberg Dordrecht London Library of Congress Control Number: 2013953316 © Springer Science+Business Media New York 2014 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. While the advice and information in this book are believed to be true and accurate at the date of publication, neither the authors nor the editors nor the publisher can accept any legal responsibility for any errors or omissions that may be made. The publisher makes no warranty, express or implied, with respect to the material contained herein. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com)
Preface
Since 2007, when Stanley Williams and his team at HP Labs constructed a nanoelectronic device [1] showing certain fingerprints of a memristor, there has been a resurgence of research activities in developing elements of electronic circuits and analyzing physical systems exhibiting those fingerprints. The existence of a memristor (for MEMory ResISTOR) as a fourth basic circuit element relating fluxlinkage to charge had been postulated by Chua [2] in 1971. A memristor behaves like a nonlinear resistor with memory depending on the past history of the current or voltage in the device. An extension of the notion to memristive systems [3] was given by Chua and Kang (1976) allowing that these systems depend add
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