Redox-Based Memristive Devices
Over the past few decades, MOSFET-based nonvolatile memories have played a significant role in the growth of the portable electronic market. However, aggressive device scaling trends are about to reach their limits. In the quest for the next generation no
- PDF / 2,021,022 Bytes
- 29 Pages / 439.36 x 666.15 pts Page_size
- 29 Downloads / 253 Views
Redox-Based Memristive Devices Vikas Rana and Rainer Waser
Over the past few decades, MOSFET-based nonvolatile memories have played a significant role in the growth of the portable electronic market. However, aggressive device scaling trends are about to reach their limits. In the quest for the next generation nonvolatile memory device, several mechanisms such as redox-based, phase-change, magnetic-junction, and ferroelectrics have recently been extensively investigated. A highly promising candidate that is expected to succeed the flash memory device is the redox-based resistive random access memory (ReRAM). The fundamental requirements of a nonvolatile memory are nondestructive write/read operations at a speed comparable to current logic devices, infinite retention, low energy consumption, and integration capability with the current CMOS process. In this chapter, we will describe the current understanding of the physical mechanism of redox-based resistive switching and address several technological aspects of metal-oxide ReRAMs.
7.1 Metal-Oxide ReRAM Silicon-based nonvolatile memory technology, i.e. flash memory [1], has been extensively used, for example, in mobile storage, digital audio players, digital cameras, video games, scientific instrumentation, industrial robotics, medical electronics, and so on. In the quest for faster speed and lower cost, this technology V. Rana () Peter Grünberg Institut -7, Forschungszentrum Jülich GmbH, Jülich 52425, Germany e-mail: [email protected] R. Waser Peter Grünberg Institut -7, Forschungszentrum Jülich GmbH, Jülich 52425, Germany Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Aachen 52062, Germany & JARA-FIT, Germany e-mail: [email protected] R. Tetzlaff (ed.), Memristors and Memristive Systems, DOI 10.1007/978-1-4614-9068-5__7, © Springer Science+Business Media New York 2014
223
224
V. Rana and R. Waser
suffers from low endurance and high voltage in writing operations (16–20 V) and is approaching its fundamental scaling limits due to the increasing difficulty of retaining electrons in the shrinking dimensions [2]. These concerns demand an alternative low-cost and low-power memory device. The expected characteristics of an ideal nonvolatile memory comprise write and (preferably nondestructive) read operations at speeds comparable to those of logic devices, low energy consumption, infinite retention, and infinite number of read and write cycles. Various technologies such as magnetic random access memory (MRAM) [3], ferroelectric random access memory (FRAM) [4], spin-transfer torque random access memory (STTRAM) [5], and redox-based resistive random access memory (ReRAM) [6] are competing to become a mainstream memory technology. In order to dominate the nonvolatile memory market, a future technology must meet the requirements of high performance, robustness, integration capabilities, and low-cost. The high performance of a memory system is defined in terms of high speed, low power consumption, and high reliability. A
Data Loading...
