Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems
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SIMULATION OF a-Si:H COLOR SENSORS FOR APPLICATION IN INTELLIGENT SENSOR SYSTEMS H. STIEBIG AND M. BOHM Center of Sensor Systems, University of Siegen W-5900 Siegen, Germany ABSTRACT
Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance. INTRODUCTION
There is a growing interest to use amorphous silicon based devices as detectors in conjunction with amorphous [1,2,3] or crystalline (TFA, Thin Film on ASIC, [4,5]) silicon system electronics in intelligent image sensors. Amorphous pin or Schottky structures can be used as black and white sensors. Color sensors consist of two antiserial diodes, either a Double Schottky Barrier 00.19eV (DSB) structure [6] or a n-i-p-i-n
layer sequence [7,8]. Fig. 1shows
Si. V Z&n
"T0.03eV 19
,e
to act as a photoelectrically active
1
window, and a bottom diode with
Ndb~p -tmcm-3 Ndb.p
la
015. _iElqcm-3
regular bandgap layers. The applica-
_
0.
tion of different bias voltages causes distinct band bendings, either in the top diode for positive bias (VColor>0) at the front electrode or in the bottom diode (VColor
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