Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment
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MRS Advances © 2016 Materials Research Society DOI: 10.1557/adv.2016.347
Single-trap kinetic in Si nanowire FETs: effect of gamma radiation treatment I. Zadorozhnyi1, J.Li1, S.Pud1, M.Petrychuk1, 2, S. Vitusevich1
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1 Peter Grünberg Institute (PGI-8),Forschungszentrum Jülich, 52425 Jülich, Germany Radiophysics Faculty, Taras Shevchenko National University Kyiv, 03022 Kyiv, Ukraine
ABSTRACT Here we report on the effect of gamma radiation treatment on transport properties and single-trap kinetics in Si nanowire (NW) field effect transistor (FET) structures. We used noise spectroscopy as a powerful method for advanced physical characterization of nanoscale devices. Our results demonstrate that transport properties of NW FETs can be changed using small doses of gamma radiation treatment. We reveal an enhancement of the gate coupling effect, which is explained as a result of the reorganization of the native defect structure after treatment. The radiation treatment approach allows the single-trap dynamic to be changed, which opens up prospects for a number of fundamental studies and applications of Si NW FET device structures, including biosensors. INTRODUCTION Low-dimensional silicon nanostructures have been intensively studied for over a decade aiming at the development of new high-performance electronic devices. Silicon nanowires (NWs), in particular, are a remarkable example of such kinds of structures. The silicon NW structures demonstrate unique electrical, optical, thermoelectric and structural properties. In addition, Si NWs are usually fabricated using complementary metal-oxide semiconductor (CMOS) technology thus making the structures attractive not only for the fundamental studies, but also for a variety of applications such as high-performance advanced transistors, cost-efficient photovoltaic devices, and ultrahigh-sensitivity chemical and biological sensors. One of the main parameters of biosensors is sensitivity to analytes. In the ideal case, the signal from single molecule has to be detected. However, biomolecular signals are not easy to detect because they are small and have to be extracted and separated from any other changes in sensor characteristics. Silicon nanowires can be scaled down to the sizes of target molecules allowing the sensitivity and selectivity to be enhanced [1]. Nanoscaling of structures often results in increasing low-frequency noise level, so that the informative signal-to-noise ratio has to be increased. Meanwhile at certain characteristic sizes of the nanowire, single traps in the gate dielectric may determine current fluctuation in the channel as a result of trapping-detrapping processes. These cause a change of nanochannel conductivity in the form of random telegraph signals (RTSs). A number of techniques have been suggested in order to reduce RTS noise. However, in spite of the generally accepted opinion that such RTS fluctuations restrict the operation of some devices, the fluctuations and single-trap phenomena can be effectively used especially when device sizes are scale
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