SnS nanocrystalline thin films for n-CdS/p-SnS solar cell devices
- PDF / 2,409,283 Bytes
- 15 Pages / 595.276 x 790.866 pts Page_size
- 99 Downloads / 203 Views
SnS nanocrystalline thin films for n-CdS/p-SnS solar cell devices Marwa Fathy1, Shaimaa Elyamny1,* Abd El-Hady B. Kashyout1
, Ahmed A. Bishara2, Gamal D. Roston2, and
1
Electronic Materials Research Department, Advanced Technology and New Materials Research Institute, City of Scientific Research and Technological Applications (SRTA-City), New Borg El-Arab City, P.O. Box 21934, Alexandria, Egypt 2 Department of Physics, Faculty of Science, Alexandria University, Alexandria, Egypt
Received: 24 May 2020
ABSTRACT
Accepted: 27 August 2020
Tin sulfide (SnS) thin films were galvanostatically electrodeposited on glass/ Indium-Tin Oxide (ITO)/Cadmium Sulfide (CdS) substrates from a non-aqueous solution. The effect of different DL-tartaric acid concentrations and various annealing environments (vacuum, air and argon) on the electrical and physical properties, secondary phase formation and performance of the solar cells were investigated in this study. From X-ray diffraction (XRD) and Raman spectra, nanocrystalline SnS thin films with orthorhombic structure were produced with some secondary phases of SnS2 and Sn2S3 which decreased by annealing in air and Ar atmospheres. Cyclic voltammetry studies showed that the films have good electrochemical properties and photoluminescence analysis indicates that the samples have a direct band gab energy about 1.55 eV. Chemical composition and morphological structure of the nanoparticles were identified using energy dispersive X-ray analysis and scanning electron microscopy, respectively. The current–voltage (I–V) characteristics (under dark) and capacitance–voltage (C– V) relations for the fabricated devices (glass/ITO/n-CdS/p-SnS/Mo), for the SnS thin film annealed under Ar environment, exhibited a rectifying behavior with a saturation current and carrier concentration of * 10-6 A and 1016 cm-3, respectively. The illuminated cell have an efficiency of 4.35%, which was investigated with an illumination intensity of 100 mW/cm2 and the output parameters; short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF) are 13.6 mA/cm2, 1000 mV and 0.32, respectively.
Ó
Springer Science+Business
Media, LLC, part of Springer Nature 2020
Address correspondence to E-mail: [email protected]
https://doi.org/10.1007/s10854-020-04362-y
J Mater Sci: Mater Electron
1 Introduction Tin sulfide (SnS), a p-type semiconductor material, is considered as an alternative absorber material to conventional Cu(In,Ga)Se2 (CIGS) and CdTe for the development of low cost and thin film solar cells (TFSCs) [1]. It has a direct optical bandgap about 1.35 eV (evaluated from Transmittance as a function of wavelength) that lies between the commonly used Si and GaAs absorbing materials [2, 3] and its high optical absorption coefficient [ 104 cm-1 in the visible region, which makes it a promising next generation absorber. In addition, both Sn and S are less toxic, safe to handle and do not pollute the environment [4]. Different methodologies were employed to fabricate SnS thin films (
Data Loading...
